Datasheet > TRS8V65H

TRS8V65H

更新时间： 2023-12-06 20:13:20

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	448K
描述
650 V/8 A SiC Schottky Barrier Diode, DFN8×8

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TRS8V65H 数据手册

TRS8V65H

SiC Schottky Barrier Diode

TRS8V65H

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 3rd generation

(2) Low forward voltage : VF = 1.2 V (typ.)

(3) Low total capacitive charge: Qc = 22 nC (typ.)

(4) Low reverse current: IR = 1.5 µA (typ.)

3. Packaging and Internal Circuit

1, 2: N.C.

3, 4: Anode

5: Cathode (heatsink)

DFN8x8

Start of commercial production

2023-05

2023-04-10

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

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