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TRF3040PT PDF预览

TRF3040PT

更新时间: 2024-11-27 22:19:11
品牌 Logo 应用领域
德州仪器 - TI 电信集成电路蜂窝电话电路电信电路
页数 文件大小 规格书
40页 575K
描述
MODULATOR/SYNTHESIZER

TRF3040PT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:PLASTIC, LQFP-48针数:48
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
风险等级:5.85Is Samacsys:N
JESD-30 代码:S-PQFP-G48长度:7 mm
功能数量:1端子数量:48
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP48,.35SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.75 V认证状态:Not Qualified
座面最大高度:1.6 mm子类别:Other Telecom ICs
标称供电电压:3.75 V表面贴装:YES
电信集成电路类型:RF AND BASEBAND CIRCUIT温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

TRF3040PT 数据手册

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TRF3040  
MODULATOR/SYNTHESIZER  
SLWS057 – AUGUST 1999  
2-GHz Main Synthesizer, Which  
Direct I/Q Modulator  
Incorporates a Dual-Mode 32/33 and 64/65  
Prescaler for Fractional-N Operation  
Control Logic for Power-Down Modes  
Single-Sideband Suppressed Carrier  
(SSBSC) Converter to Generate TX Carrier  
200-MHz Auxiliary Synthesizer, Which  
Incorporates an 8/9 Prescaler  
200-MHz TXIF Synthesizer and Oscillator  
Separate Supply Terminals for Main and  
Auxiliary Charge Pumps  
Variable Gain Amplifier (VGA) With 50 dB of  
Dynamic Range  
Internal Compensation for Fractional Spurs  
Low Phase Noise  
900-MHz Power Amplifier (PA) Driver With  
9 dBm Typical Output Power  
Normal and Integral Charge Pump Outputs  
Reference and Clock Buffers  
Fully Programmable Main and Auxiliary  
Dividers  
158 mA Typical Total Operating Current at  
3.75 V Supply  
Serial Data Interface  
48-Pin Quad Flatpack (LQFP)  
PT PACKAGE  
(TOP VIEW)  
48 47 46 45 44 43 42 41 40 39 38 37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
XTAL–  
TXEN  
DATA  
CLOCK  
LOCK  
STROBE  
PHP  
1
2
3
4
5
6
7
8
9
V
DDA  
RXLO+  
RXLO–  
V
SSA  
V
CCP  
V
TXLO+  
TXLO–  
SSA  
V
DD  
I
I
Q
Q
V
SSP  
PHSOUT 10  
IPEAK  
TANK+  
11  
12  
13 14 15 16 17 18 19 20 21 22 23 24  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1999, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TRF3040PT 替代型号

型号 品牌 替代类型 描述 数据表
TRF3040PTR TI

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