Datasheet > TPWR6003PL

TPWR6003PL

更新时间： 2023-12-20 18:44:34

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	513K
描述
N-ch MOSFET, 30 V, 0.0006 Ω@10V, DSOP Advance, U-MOSⅨ-H

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TPWR6003PL 数据手册

TPWR6003PL

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

VDSS

VGSS

(Note 1)

(Note 2)

±20

150

(Tc = 25 )

(Bottom drain)

Drain current (DC)

Drain current (pulsed)

Power dissipation

(Silicon limit)

(Note 2), (Note 3)

(Note 2)

412

500

170

(t = 100 µs)

IDP

(Tc = 25 )

(Bottom drain)

Power dissipation

(Note 4)

(Note 5)

(Note 6)

3.0

0.96

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

EAS

IAS

468

120

Tch

Tstg

175



Storage temperature

-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Symbol

Max

0.88

Unit

Bottom drain

Rth(ch-c)

/W

(Tc = 25 )

Channel-to-case thermal resistance

Top source

Rth(ch-c)

0.93

(Tc = 25 )

Channel-to-ambient thermal resistance

(Note 4)

(Note 5)

Rth(ch-a)

156

Note 1: +20 V/-16 V ensured at DC condition.

-20 V ensured at pulse condition (duty 5 %).

Note 2: Ensure that the channel temperature does not exceed 175 .

Note 3: Limited 150A by package capability.

Note 4: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 5: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 6: VDD = 24 V, Tch = 25  (initial), L = 0.025mH, IAS = 120 A

Fig. 5.1 Device Mounted on a Glass-Epoxy

Board (a)

Fig. 5.2 Device Mounted on a Glass-Epoxy

Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

Toshiba Electronic Devices & Storage Corporation

2019-10-21

Rev.4.0

123 4 5 6 7...10

下载PDF

与TPWR6003PL相关器件

型号	品牌	描述	获取价格	数据表
TPWR7904PB	TOSHIBA	N-ch MOSFET, 40 V, 150 A, 0.00079 Ω@10V, DSOP	获取价格
TPWR8004PL	TOSHIBA	Nch 30V<VDSS≤60V, Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power	获取价格
TPWR8503NL	TOSHIBA	N-ch MOSFET, 30 V, 0.00085 Ω@10V, DSOP Advanc	获取价格
TPWRD4M50B05-B0	MURATA	Ceramic BRF, 4.5MHz	获取价格
TPWRD4M50B06-B0	MURATA	Ceramic BRF, 4.5MHz	获取价格
TPWRD4M50B10-B0	MURATA	Ceramic BRF, 4.5MHz	获取价格