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TPV596

更新时间: 2024-01-07 19:29:09
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 98K
描述
UHF LINEAR POWER TRANSISTOR

TPV596 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.7 A
配置:Single最小直流电流增益 (hFE):15
最高工作温度:200 °C极性/信道类型:NPN
最大功率耗散 (Abs):8.8 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

TPV596 数据手册

 浏览型号TPV596的Datasheet PDF文件第2页浏览型号TPV596的Datasheet PDF文件第3页浏览型号TPV596的Datasheet PDF文件第4页 
Order this document  
by TPV596A/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and  
500 mW Band V TV transposer stages. Gold metallization and diffused emitter  
ballast resistors are used to enhanced reliability, ruggedness and linearity.  
Band IV and V (470860 MHz)  
0.5 W — P @ 58 dB IMD  
ref  
High Gain — 12 dB Typ, Class A, f = 860 MHz  
0.5 W, 470860 MHz  
Gold Metallization for Reliability  
UHF LINEAR  
POWER TRANSISTOR  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
24  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
45  
3.5  
0.7  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
8.75  
0.05  
Watts  
W/°C  
C
Operating Junction Temperature  
Storage Temperature Range  
T
200  
°C  
°C  
J
CASE 244–04, STYLE 1  
(.280 SOE)  
T
stg  
65 to +200  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case (T = 70°C)  
R
20  
°C/W  
C
θJC  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
V
V
V
24  
45  
3.5  
Vdc  
Vdc  
Vdc  
mA  
(BR)CEO  
(I = 20 mA, I = 0)  
C
B
Collector–Base Breakdown Voltage  
(I = 1.0 mA, I = 0)  
(BR)CBO  
(BR)EBO  
C
E
Emitter–Base Breakdown Voltage  
(I = 4.0 mA, I = 0)  
E
C
Emitter–Base Leakage Current  
(V = 2.0 V)  
I
0.25  
1.0  
EBO  
EB  
Collector Cutoff Current  
(V = 28 V, I = 0)  
I
mAdc  
Vdc  
CBO  
CB  
Collector–Emitter Breakdown Voltage  
(I = 20 mA, R = 10 )  
E
V
50  
(BR)CER  
C
BE  
ON CHARACTERISTICS  
DC Current Gain  
(I = 100 mA, V  
C CE  
h
15  
120  
5.0  
FE  
= 5.0 V)  
DYNAMIC CHARACTERISTICS  
Output Capacitance  
C
pF  
ob  
(V  
CB  
= 28 V, I = 0, f = 1.0 MHz)  
E
(continued)  
Motorola, Inc. 1994  

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