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TPV60R190A PDF预览

TPV60R190A

更新时间: 2024-04-09 18:59:10
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP /
页数 文件大小 规格书
9页 352K
描述
超结功率 MOSFET(Super Junction MOSFET)是一种新型功率器件,采用基于电荷平衡的器件结构,导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率,目前国际上Infi

TPV60R190A 数据手册

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TPP60R190A, TPA60R190A, TPV60R190A  
Wuxi Unigroup Microelectronics Company  
600V Super-Junction Power MOSFET  
FEATURES  
Very low FOM RDS(on)×Qg  
100% avalanche tested  
RoHS compliant  
APPLICATIONS  
Switch Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Power Factor Correction (PFC)  
Device Marking and Package Information  
Device  
Package  
TO-220  
TO-220F  
TO-3P  
Marking  
TPP60R190A  
TPA60R190A  
TPV60R190A  
60R190A  
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted  
Value  
TO-3P  
600  
20  
Parameter  
Symbol  
Unit  
TO-220  
TO-220F  
Drain-Source Voltage (VGS = 0V)  
Continuous Drain Current  
Pulsed Drain Current  
VDSS  
ID  
V
A
IDM  
60  
A
(note1)  
Gate-Source Voltage  
VGSS  
EAS  
IAR  
±30  
500  
10  
V
Single Pulse Avalanche Energy  
Avalanche Current  
(note2)  
(note1)  
(note1)  
mJ  
A
Repetitive Avalanche Energy  
Power Dissipation (TC = 25ºC)  
EAR  
PD  
1
mJ  
W
ºC  
208  
34.5  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55~+150  
Thermal Resistance  
Value  
Parameter  
Symbol  
Unit  
TO-220  
TO-3P  
TO-220F  
3.6  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RthJC  
RthJA  
0.6  
62  
ºC/W  
80  
V3.0  
www.tsinghuaicwx.com  
1

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