Datasheet > TPSMDJ10A

TPSMDJ10A

更新时间： 2024-10-30 21:06:55

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技术参数
数据手册

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TPSMDJ10A 技术参数

Case Style：	SMC	Ppk(W)：	3000
MIN_(V)：	11.10	MAX_(V)：	12.30
Vwm_(V)：	10.0	Ir_(uA)：	15
Ippm_(A)：	176.47	Vc_(V)：	17.0
class：	Diodes

TPSMDJ10A 数据手册

TPSMDJ Series

Working Voltage: 10 to 43 V

Peak Pulse Power: 3000 W

Surface Mount

Transient Voltage Suppressors

SMC/ DO-214AB

Features

● Glass passivated chip

●

3000 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle):0.01 %

●

High reliability application and automotive

grade AEC Q101 qualified

●

Low leakage

●

Uni and Bidirectional unit

●

Excellent clamping capability

●

Very fast response time

● RoHS compliant

Mechanical Data

● Case: Molded plastic

● Epoxy: UL 94V-0 rate flame retardant Lead:

●

Solderable per MIL-STD-750, method

2026

Polarity: Color band denotes cathode end

●

except Bipolar

● Mounting position: Any

Maximum Ratings(T_A=25℃ unless otherwise noted)

Value

3000

Unit

Parameter

Symbol

Peak power dissipation with a 10/1000μs waveform⁽¹⁾

P_PP

Peak pulse current with a 10/1000μs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 50 °C

Peak forward surge current, 8.3 ms single half sine-wave

I_PP

P_D

See Next Table

6.5

I_FSM

300

unidirectional only⁽²⁾

Maximum instantaneous forward voltage at 100A for

unidirectional only⁽³⁾

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

- 55 to +150

°C

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3)V_F<3.5V for devices of V_BR<200V and V_F<5.0V for devices of V_BR>201V

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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