Datasheet > TPSMD33CA

TPSMD33CA

更新时间： 2024-11-09 22:57:47

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	805K
描述
TVS DIODE 33V 53.3V DO214AB

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中文翻译

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数据手册

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TPSMD33CA 数据手册

TVS Diodes

Surface Mount – 3000W > TPSMD series

Pb e3

RoHS

TPSMD Series

Description

TheTPSMD series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

Uni-directional

• Hi reliability application

and automotive grade

AEC-Q101 qualiﬁed

• SMT for minimal boad

footprint

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I_R≤ 2µA for V_R>

• Low proﬁle package

10V

Agency Approvals

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

• High temperature

soldering guaranteed:

260°C/10 seconds at

terminals

• UL Recognized compound

meeting ﬂammability

rating V-0.

• Meet MSL level1,

per J-STD-020, high

temperature soldering

guaranteed.

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

30kV(Air), 30kV (Contact)

Parameter

Symbol

P_PPM

Value

3000

Unit

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Peak Pulse Power Dissipation by

10/1000µs Waveform (Fig.2)(Note

1), (Note 2)

• Matte tin lead–free plated

Power Dissipation on Inﬁnite Heat

Sink atT_A=50^OC

• Built-in strain relief

• Halogen free and RoHS

compliant

P_M(AV)

I_FSM

6.5

• V_BR@T_J= V_BR@25°C x (1+αT

x (T_J- 25))

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

300

(αT:Temperature Coefﬁcient)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only

• Glass passivated chip

junction

• 3000W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0V to V_BRmin

V_F

3.5

Operating Junction and Storage

Temperature Range

T_J, T_STG-65 to 150

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse per Fig. 4 and derated aboveT_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only, duty cycle=4 per minute maximum.

Applications

Functional Diagram

TVS Components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/20/18

12 3 4 5 6

中文翻译

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与TPSMD33CA相关器件

型号	品牌	获取价格	描述	数据表
TPSMD36A	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TPSMD36A-T7	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TPSMD36CA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TPSMD36CA-T7	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TPSMD400CA-A	LITTELFUSE	获取价格	符合AEC-Q101认证的TPSMD系列专门设计用于保护敏感电子设备，使其免受雷击和其它瞬
TPSMD40A	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TPSMD40CA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TPSMD40CA-T7	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TPSMD43A	LITTELFUSE	获取价格	TVS DIODE 43V 69.4V DO214AB
TPSMD43CA	LITTELFUSE	获取价格	TVS DIODE 43V 69.4V DO214AB

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