Datasheet > TPSMD11A

TPSMD11A

更新时间： 2024-11-25 22:57:47

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	805K
描述
TVS DIODE 11V 18.2V DO214AB

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中文翻译

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数据手册
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TPSMD11A 数据手册

TVS Diodes

Surface Mount – 3000W > TPSMD series

Pb e3

RoHS

TPSMD Series

Description

TheTPSMD series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

Uni-directional

• Hi reliability application

and automotive grade

AEC-Q101 qualiﬁed

• SMT for minimal boad

footprint

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I_R≤ 2µA for V_R>

• Low proﬁle package

10V

Agency Approvals

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

• High temperature

soldering guaranteed:

260°C/10 seconds at

terminals

• UL Recognized compound

meeting ﬂammability

rating V-0.

• Meet MSL level1,

per J-STD-020, high

temperature soldering

guaranteed.

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

30kV(Air), 30kV (Contact)

Parameter

Symbol

P_PPM

Value

3000

Unit

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Peak Pulse Power Dissipation by

10/1000µs Waveform (Fig.2)(Note

1), (Note 2)

• Matte tin lead–free plated

Power Dissipation on Inﬁnite Heat

Sink atT_A=50^OC

• Built-in strain relief

• Halogen free and RoHS

compliant

P_M(AV)

I_FSM

6.5

• V_BR@T_J= V_BR@25°C x (1+αT

x (T_J- 25))

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

300

(αT:Temperature Coefﬁcient)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only

• Glass passivated chip

junction

• 3000W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0V to V_BRmin

V_F

3.5

Operating Junction and Storage

Temperature Range

T_J, T_STG-65 to 150

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse per Fig. 4 and derated aboveT_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only, duty cycle=4 per minute maximum.

Applications

Functional Diagram

TVS Components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/20/18

12 3 4 5 6

中文翻译

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TPSMD11A 替代型号

型号	品牌	替代类型	描述	数据表
SMDJ11A-HRA	LITTELFUSE	完全替代	SMDJ-HRA高可靠性系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态事件引起的瞬态
SMDJ11A-T7	LITTELFUSE	类似代替	Trans Voltage Suppressor Diode, 3000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMDJ11A	LITTELFUSE	类似代替	Transient Voltage Suppression Diodes

与TPSMD11A相关器件

型号	品牌	获取价格	描述	数据表
TPSMD11CA	LITTELFUSE	获取价格	TVS DIODE 11V 18.2V DO214AB
TPSMD12A	LITTELFUSE	获取价格	TVS DIODE 12V 19.9V DO214AB
TPSMD12CA	LITTELFUSE	获取价格	TVS DIODE 12V 19.9V DO214AB
TPSMD13A	LITTELFUSE	获取价格	TVS DIODE 13V 21.5V DO214AB
TPSMD13CA	LITTELFUSE	获取价格	TVS DIODE 13V 21.5V DO214AB
TPSMD14A	LITTELFUSE	获取价格	TVS DIODE 14V 23.2V DO214AB
TPSMD14CA	LITTELFUSE	获取价格	TVS DIODE 14V 23.2V DO214AB
TPSMD15A	LITTELFUSE	获取价格	TVS DIODE 15V 24.4V DO214AB
TPSMD15CA	LITTELFUSE	获取价格	TVS DIODE 15V 24.4V DO214AB
TPSMD16A	LITTELFUSE	获取价格	TVS DIODE 16V 26V DO214AB

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