Datasheet > TPSMBJ75A

TPSMBJ75A

更新时间： 2024-11-02 14:25:47

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鲁光 - LGE		/
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技术参数
数据手册

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TPSMBJ75A 技术参数

Case Style：	SMB	Ppk(W)：	600
MIN_(V)：	83.30	MAX_(V)：	92.10
Vwm_(V)：	75.0	Ir_(uA)：	1
Ippm_(A)：	4.96	Vc_(V)：	121.0
class：	Diodes

TPSMBJ75A 数据手册

TPSMBJ Series

Working Voltage: 11 to 170 V

Peak Pulse Power: 600 W

Surface Mount

Transient Voltage Suppressors

SMB/ DO-214AA

Features

● Glass passivated chip

●

600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

0.191 [4.85]

0.171 [4.35]

cycle):0.01 %

0.087 [2.20]

0.078 [1.96]

0.148 [3.75]

0.130 [3.30]

●

High reliability application and automotive grade

AEC Q101 qualified

●

● Low leakage

● Uni and Bidirectional unit

● Excellent clamping capability

● Very fast response time

● RoHS compliant

0.012 [0.30]

0.006 [0.15]

0.096 [2.44]

0.084 [2.13]

Mechanical Data

● Case: Molded plastic

0.008 [0.20]

0.059 [1.51]

0.030 [0.75]

● Epoxy: UL 94V-0 rate flame retardant

[0.00]

●

Lead: Solderable per MIL-STD-750, method

2026

0.217 [5.50]

0.201 [5.10]

● Polarity: Color band denotes cathode end

except Bipolar

● Mounting position: Any

Maximum Ratings(T_A=25℃ unless otherwise noted)

Value

600

Unit

Parameter

Symbol

Peak power dissipation with a 10/1000μs waveform⁽¹⁾

P_PP

I_PP

P_D

Peak pulse current with a 10/1000μs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C

Peak forward surge current, 8.3 ms single half sine-wave

See Next Table

5.0

I_FSM

100

unidirectional only⁽²⁾

Maximum instantaneous forward voltage at 50 A for

V_F

T_J, T_STG

3.5/5.0

unidirectional only⁽³⁾

Operating junction and storage temperature range

- 55 to +150

°C

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3)V_F<3.5V for devices of V_BR<200V and V_F<5.0V for devices of V_BR>201V

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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