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TPSMBJ45CA PDF预览

TPSMBJ45CA

更新时间: 2024-11-01 14:25:47
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
3页 1090K
描述
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TPSMBJ45CA 技术参数

Case Style:SMBPpk(W):600
MIN_(V):50.00MAX_(V):55.30
Vwm_(V):45.0Ir_(uA):1
Ippm_(A):8.25Vc_(V):72.7
class:Diodes

TPSMBJ45CA 数据手册

 浏览型号TPSMBJ45CA的Datasheet PDF文件第2页浏览型号TPSMBJ45CA的Datasheet PDF文件第3页 
TPSMBJ Series  
Working Voltage: 11 to 170 V  
Peak Pulse Power: 600 W  
Surface Mount  
Transient Voltage Suppressors  
SMB/ DO-214AA  
Features  
Glass passivated chip  
600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
0.191 [4.85]  
0.171 [4.35]  
cycle):0.01 %  
0.087 [2.20]  
0.078 [1.96]  
0.148 [3.75]  
0.130 [3.30]  
High reliability application and automotive grade  
AEC Q101 qualified  
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
0.012 [0.30]  
0.006 [0.15]  
0.096 [2.44]  
0.084 [2.13]  
Mechanical Data  
Case: Molded plastic  
0.008 [0.20]  
0.059 [1.51]  
0.030 [0.75]  
Epoxy: UL 94V-0 rate flame retardant  
0
[0.00]  
Lead: Solderable per MIL-STD-750, method  
2026  
0.217 [5.50]  
0.201 [5.10]  
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
600  
Unit  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000μs waveform(1)  
PPP  
IPP  
PD  
Peak pulse current with a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-wave  
See Next Table  
5.0  
A
W
IFSM  
100  
A
unidirectional only(2)  
Maximum instantaneous forward voltage at 50 A for  
VF  
TJ, TSTG  
3.5/5.0  
V
unidirectional only(3)  
Operating junction and storage temperature range  
- 55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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