TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Surface-Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
Available
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in unidirectional polarity only
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
Available
SMB (DO-214AA)
Cathode
• Excellent clamping capability
• Very fast response time
Anode
LINKS TO ADDITIONAL RESOURCES
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
3
D
3D Models
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR
6.8 V to 43 V
VWM
5.8 V to 36.8 V
600 W
MECHANICAL DATA
PPPM
Case: SMB (DO-214AA)
IFSM
75 A
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
TJ max.
Polarity
Package
185 °C
Unidirectional
SMB (DO-214AA)
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak pulse current with a 10/1000 μs waveform (fig. 3) (1)
Peak forward surge current 8.3 ms single half sine-wave (2)(3)
Maximum instantaneous forward voltage at 50 A (2)(3)
Operating junction and storage temperature range
600
See table next page
A
IFSM
75
3.5
A
VF
V
TJ, TSTG
-65 to +185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
(2)
(3)
Revision: 19-Apr-2021
Document Number: 88406
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000