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TPSMB10HE3/52T

更新时间： 2024-10-30 22:52:27
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 93K
描述
TVS DIODE 8.1V 15V DO214AA

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中文翻译

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TPSMB10HE3/52T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.71
其他特性：EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY最大击穿电压：11 V
最小击穿电压：9 V击穿电压标称值：10 V
最大钳位电压：15 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2最高工作温度：185 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：8.1 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30Base Number Matches：1

TPSMB10HE3/52T 数据手册

 浏览型号TPSMB10HE3/52T的Datasheet PDF文件第2页浏览型号TPSMB10HE3/52T的Datasheet PDF文件第3页浏览型号TPSMB10HE3/52T的Datasheet PDF文件第4页浏览型号TPSMB10HE3/52T的Datasheet PDF文件第5页 
TPSMB6.8A thru TPSMB43A  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
Available  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high  
reliability and automotive requirement  
• Available in unidirectional polarity only  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
Available  
SMB (DO-214AA)  
Cathode  
• Excellent clamping capability  
• Very fast response time  
Anode  
LINKS TO ADDITIONAL RESOURCES  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
3
D
3
D
3D Models  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 43 V  
VWM  
5.8 V to 36.8 V  
600 W  
MECHANICAL DATA  
PPPM  
Case: SMB (DO-214AA)  
IFSM  
75 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
TJ max.  
Polarity  
Package  
185 °C  
Unidirectional  
SMB (DO-214AA)  
(“_X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 and HM3 suffix meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)  
Peak pulse current with a 10/1000 μs waveform (fig. 3) (1)  
Peak forward surge current 8.3 ms single half sine-wave (2)(3)  
Maximum instantaneous forward voltage at 50 A (2)(3)  
Operating junction and storage temperature range  
600  
See table next page  
A
IFSM  
75  
3.5  
A
VF  
V
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal  
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
(3)  
Revision: 19-Apr-2021  
Document Number: 88406  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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