TPSMA6.8A thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
Available
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
SMA (DO-214AC)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
VWM
5.8 V to 36.8 V
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
VBR
6.8 V to 43 V
400 W
PPPM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PD
1.0 W
IFSM
40 A
MECHANICAL DATA
TJ max.
Polarity
Package
185 °C
Case: SMA (DO-214AC)
Uni-directional
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
TYPICAL APPLICATIONS
(“_X” denotes revision code e.g. A, B, ...)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lightning
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
UNIT
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)
Power dissipation at TA = 25 °C (4)
400
See next table
1.0
A
PD
W
Peak forward surge current 8.3 ms single half sine-wave (3)
Maximum instantaneous forward voltage at 25 A (3)
Operating junction and storage temperature range
IFSM
40
A
VF
3.5
V
TJ, TSTG
-65 to +185
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Mounted on minimum recommended pad layout
(2)
(3)
(4)
Revision: 11-Jul-17
Document Number: 88405
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000