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TPSMA6.8_11 PDF预览

TPSMA6.8_11

更新时间: 2024-11-14 08:37:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 81K
描述
Surface Mount PAR Transient Voltage Suppressors

TPSMA6.8_11 数据手册

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TPSMA6.8 thru TPSMA43A  
Vishay General Semiconductor  
®
Surface Mount PAR Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• T = 185 °C capability suitable for high  
J
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
DO-214AC (SMA)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
PRIMARY CHARACTERISTICS  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
VBR  
PPPM  
PD  
6.8 V to 43 V  
400 W  
1.0 W  
40 A  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
IFSM  
TJ max.  
185 °C  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1)(2) (fig. 3)  
Peak power pulse current with a 10/1000 µs waveform (1) (fig. 1)  
Power dissipation at TA = 25 °C (4)  
400  
See next table  
1.0  
A
PD  
W
Peak forward surge current 8.3 ms single half sine-wave (3)  
Maximum instantaneous forward voltage at 25 A (3)  
Operating junction and storage temperature range  
IFSM  
40  
A
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
(2) Mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal  
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum  
(4) Mounted on minimum recommended pad layout  
Document Number: 88405  
Revision: 09-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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