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TPS79328YEQ

更新时间： 2024-11-13 22:11:23
品牌 Logo 应用领域
德州仪器 - TI 稳压器射频
页数 文件大小 规格书
18页 446K
描述
ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS IN NANOSTAR? WAFER CHIP SCALE AND SOT23

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TPS79328YEQ 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：VFBGA,针数：5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.69
最大回动电压 1：0.2 V最大输入电压：5.5 V
最小输入电压：2.7 VJESD-30 代码：R-PBGA-B5
JESD-609代码：e0长度：1.32 mm
功能数量：1端子数量：5
工作温度TJ-Max：125 °C工作温度TJ-Min：-40 °C
最大输出电流 1：0.2 A最大输出电压 1：2.856 V
最小输出电压 1：2.744 V标称输出电压 1：2.8 V
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
认证状态：Not Qualified调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度：0.625 mm表面贴装：YES
技术：BICMOS端子面层：TIN LEAD
端子形式：BALL端子节距：0.5 mm
端子位置：BOTTOM宽度：0.815 mm
Base Number Matches：1

TPS79328YEQ 数据手册

 浏览型号TPS79328YEQ的Datasheet PDF文件第2页浏览型号TPS79328YEQ的Datasheet PDF文件第3页浏览型号TPS79328YEQ的Datasheet PDF文件第4页浏览型号TPS79328YEQ的Datasheet PDF文件第5页浏览型号TPS79328YEQ的Datasheet PDF文件第6页浏览型号TPS79328YEQ的Datasheet PDF文件第7页 
TPS79301, TPS79318  
D
B
V
6
Y
E
Q
D BV 5  
TPS79325, TPS79328, TPS793285  
TPS79330, TPS79333, TPS793475  
www.ti.com  
SLVS348H–JULY 2001–REVISED OCTOBER 2004  
ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR  
REGULATORS IN NanoStar™ WAFER CHIP SCALE AND SOT23  
FEATURES  
DESCRIPTION  
•
200-mA RF Low-Dropout Regulator  
With Enable  
The TPS793xx family of low-dropout (LDO)  
low-power linear voltage regulators features high  
power-supply rejection ratio (PSRR), ultralow-noise,  
fast start-up, and excellent line and load transient  
responses in NanoStar wafer chip scale and SOT23  
packages. NanoStar packaging gives an ultrasmall  
footprint as well as an ultralow profile and package  
weight, making it ideal for portable applications such  
as handsets and PDAs. Each device in the family is  
stable, with a small 2.2-µF ceramic capacitor on the  
output. The TPS793xx family uses an advanced,  
proprietary BiCMOS fabrication process to yield ex-  
tremely low dropout voltages (e.g., 112 mV at  
200 mA, TPS79330). Each device achieves fast  
start-up times (approximately 50 µs with a 0.001-µF  
bypass capacitor) while consuming very low quiesc-  
ent current (170 µA typical). Moreover, when the  
device is placed in standby mode, the supply current  
is reduced to less than 1 µA. The TPS79328 exhibits  
approximately 32 µVRMS of output voltage noise at  
2.8-V output with a 0.1-µF bypass capacitor. Appli-  
•
Available in 1.8-V, 2.5-V, 2.8-V, 2.85-V, 3-V,  
3.3-V, 4.75-V, and Adjustable (1.22-V to 5.5-V)  
•
•
•
•
•
•
High PSRR (70 dB at 10 kHz)  
Ultralow-Noise (32 µVRMS, TPS79328)  
Fast Start-Up Time (50 µs)  
Stable With a 2.2-µF Ceramic Capacitor  
Excellent Load/Line Transient Response  
Very Low Dropout Voltage (112 mV at Full  
Load, TPS79330)  
•
5- and 6-Pin SOT23 (DBV) and NanoStar Wafer  
Chip Scale (YEQ) Packages  
APPLICATIONS  
•
•
•
•
•
RF: VCOs, Receivers, ADCs  
Audio  
Cellular and Cordless Telephones  
Bluetooth™, Wireless LAN  
Handheld Organizers, PDAs  
cations with analog components  
that  
are  
noise-sensitive, such as portable RF electronics,  
benefit from the high PSRR and low-noise features  
as well as the fast response time.  
DBV PACKAGE  
(TOP VIEW)  
TPS79328  
TPS79328  
OUT  
NR  
IN  
1
2
5
RIPPLE REJECTION  
vs  
OUTPUT SPECTRAL NOISE DENSITY  
vs  
GND  
FREQUENCY  
FREQUENCY  
0.30  
3
4
100  
90  
EN  
V
= 3.8 V  
= 2.2 µF  
IN  
I
= 200 mA  
OUT  
Fixed Option  
C
C
OUT  
= 0.1 µF  
0.25  
0.20  
80  
NR  
DBV PACKAGE  
(TOP VIEW)  
70  
IN  
GND  
EN  
OUT  
FB  
1
2
6
5
60  
0.15  
50  
40  
30  
I
= 1 mA  
OUT  
I
= 10 mA  
OUT  
3
4
NR  
0.10  
0.05  
I
= 200 mA  
Adjustable Option  
YEQ  
OUT  
20  
10  
0
V
C
C
= 3.8 V  
= 10 µF  
IN  
PACKAGE  
(TOP VIEW)  
OUT  
= 0.01 µF  
NR  
0
IN  
OUT  
100  
1 k  
10 k  
100 k  
10  
100  
1 k  
10 k 100 k 1 M 10 M  
C3 C1  
B2  
A3 A1  
Frequency (Hz)  
Frequency (Hz)  
NR  
GND  
EN  
Figure 1.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Bluetooth is a trademark of Bluetooth Sig, Inc.  
NanoStar is a trademark of Texas Instruments.  
UNLESS OTHERWISE NOTED this document contains PRO-  
DUCTION DATA information current as of publication date. Prod-  
ucts conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily  
include testing of all parameters.  
Copyright © 2001–2004, Texas Instruments Incorporated  
1234567...18

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