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ꢀ ꢁꢂꢃ ꢄ ꢅ ꢋ ꢋ ꢇꢈ ꢅ ꢉ ꢀ ꢁꢂ ꢃꢄ ꢅꢌ ꢃꢇꢈ ꢅ
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www.ti.com
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SGLS160B − APRIL 2003 − REVISED SEPTEMBER 2008
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ꢎ ꢑꢒ ꢇ ꢚ ꢏ ꢑꢁ ꢑꢍ ꢀ ꢎꢔ ꢓꢕ ꢐꢏ ꢏꢕ ꢗ ꢍꢎꢐꢀꢑ ꢏꢂ
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FEATURES
DESCRIPTION
D
Qualified for Automotive Applications
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
The TPS791xx family of low-dropout (LDO)
low-power linear voltage regulators features high
power supply rejection ratio (PSRR), ultralow
noise, fast start-up, and excellent line and load
transient responses in a small outline, SOT23,
package. Each device in the family is stable with
a small 1-µF ceramic capacitor on the output.
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100-mA Low-Dropout Regulator With EN
Available in 1.8-V, 3.3-V, 4.7-V, and Adj.
High PSRR (70 dB at 10 kHz)
The family uses an advanced, proprietary
BiCMOS fabrication process to yield extremely
low dropout voltages (e.g., 38 mV at 100 mA,
TPS79147). Each device achieves fast start-up
times (approximately 63 µs with a 0.001 µF
bypass capacitor) while consuming very low
quiescent current (170 µA typical). Moreover,
when the device is placed in standby mode, the
supply current is reduced to less than 1 µA. The
Ultralow Noise (15 µV
)
RMS
Fast Start-Up Time (63 µs)
Stable With Any 1-µF Ceramic Capacitor
Excellent Load/Line Transient
Very Low Dropout Voltage
(38 mV at Full Load, TPS79147)
D
5-Pin SOT23 (DBV) Package
TPS79118 exhibits approximately 15 µV
of
RMS
D
TPS792xx Provides EN Options
output voltage noise with a 0.1 µF bypass
capacitor.
APPLICATIONS
Applications with analog components that are
noise sensitive, such as portable RF electronics,
benefit from the high PSRR and low noise
features as well as the fast response time.
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VCOs
RF
Bluetooth, Wireless LAN
ORDERING INFORMATION
T
VOLTAGE
1.2 to 5.5 V
1.8 V
PACKAGE
PART NUMBER
SYMBOL
PEU1
J
(1)
TPS79101DBVRQ1
(1)
TPS79118DBVRQ1
PER1
SOT23
(DBV)
−40°C to 125°C
(1)
TPS79133DBVRQ1
3.3 V
PES1
(1)(2)
TPS79147DBVRQ1
4.7 V
PET1
(1)
(2)
The DBVR indicates tape and reel of 3000 parts.
This part is Product Preview.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
Bluetooth is a trademark owned by the Bluetooth SIG, Inc.
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Copyright 2008, Texas Instruments Incorporated