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TPS28226DT PDF预览

TPS28226DT

更新时间: 2024-02-17 21:18:39
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
38页 1162K
描述
BUF OR INV BASED MOSFET DRIVER, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8

TPS28226DT 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.37
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.89 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压:8 V
最小供电电压:6.8 V标称供电电压:7.2 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

TPS28226DT 数据手册

 浏览型号TPS28226DT的Datasheet PDF文件第3页浏览型号TPS28226DT的Datasheet PDF文件第4页浏览型号TPS28226DT的Datasheet PDF文件第5页浏览型号TPS28226DT的Datasheet PDF文件第7页浏览型号TPS28226DT的Datasheet PDF文件第8页浏览型号TPS28226DT的Datasheet PDF文件第9页 
TPS28226  
www.ti.com  
SLUS791OCTOBER 2007  
ELECTRICAL CHARACTERISTICS(1)  
VDD = 7.2 V, EN/PG pulled up to VDD by 100-kresistor, TA = TJ = –40°C to 125°C (unless otherwise noted)  
PARAMETER  
UNDER VOLTAGE LOCKOUT  
TEST CONDITIONS  
MIN  
TYP MAX UNIT  
Rising threshold  
Falling threshold  
Hysteresis  
6.35 6.70  
VPWM = 0 V  
4.7  
5.0  
V
1.00  
1.35  
BIAS CURRENTS  
IDD(off) Bias supply current  
IDD Bias supply current  
INPUT (PWM)  
VEN/PG = low, PWM pin floating  
VEN/PG = high, PWM pin floating  
350  
500  
μA  
VPWM = 5 V  
VPWM = 0 V  
185  
–200  
1.0  
IPWM  
Input current  
μA  
V
PWM 3-state rising threshold(2)  
PWM 3-state falling threshold  
VPWM PEAK = 5 V  
3.4  
3.8  
4.0  
2.1  
tHLD_R 3-state shutdown Hold-off time  
TMIN PWM minimum pulse to force UGATE pulse  
250  
30  
ns  
CL = 3 nF at UGATE , VPWM = 5 V  
ENABLE/POWER GOOD (EN/PG)  
Enable high rising threshold  
Enable low falling threshold  
Hysteresis  
PG FET OFF  
PG FET OFF  
1.7  
1.0  
0.8  
V
0.35  
0.70  
Power good output  
VDD = 2.5 V  
0.2  
2.0  
UPPER GATE DRIVER OUTPUT (UGATE)  
Source resistance  
500 mA source current  
VUGATE-PHASE = 2.5 V  
CL = 3 nF  
1.0  
2.0  
10  
Ω
A
(2)  
Source current  
tRU  
Rise time  
ns  
Ω
Sink resistance  
500 mA sink current  
VUGATE-PHASE = 2.5 V  
CL = 3 nF  
1.0  
2.0  
10  
2.0  
(2)  
Sink current  
A
tFU  
Fall time  
ns  
(1) Typical values for TA = 25C  
(2) Not tested in production  
6
Submit Documentation Feedback  
Copyright © 2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS28226  

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