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TPS28226DT PDF预览

TPS28226DT

更新时间: 2024-02-08 06:53:47
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
38页 1162K
描述
BUF OR INV BASED MOSFET DRIVER, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8

TPS28226DT 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.37
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.89 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压:8 V
最小供电电压:6.8 V标称供电电压:7.2 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

TPS28226DT 数据手册

 浏览型号TPS28226DT的Datasheet PDF文件第1页浏览型号TPS28226DT的Datasheet PDF文件第2页浏览型号TPS28226DT的Datasheet PDF文件第3页浏览型号TPS28226DT的Datasheet PDF文件第5页浏览型号TPS28226DT的Datasheet PDF文件第6页浏览型号TPS28226DT的Datasheet PDF文件第7页 
TPS28226  
www.ti.com  
SLUS791OCTOBER 2007  
TYPICAL APPLICATIONS (continued)  
Multi-Phase Synchronous Buck Converter  
V
C
(6.8 V to 8 V)  
V
IN  
(3 V to 32 V − V  
)
DD  
6 VDD  
BOOT  
2
TPS28226  
1
8
UGATE  
3
PHASE  
PWM  
7
EN/PG  
5
4
LGATE  
GND  
CS 1  
To Controller  
PWM1  
To Driver  
To Driver  
PWM2  
VIN  
PWM3  
6 VDD  
BOOT  
2
To Controller  
CS 4 CSCN  
TPS28226  
PWM 4  
1
8
UGATE  
GND  
VOUT  
GNDS  
PHASE  
3
7
PWM  
V
OUT  
/PG  
EN  
Enable  
5
4
LGATE  
GND  
ORDERING INFORMATION(1)(2)(3)  
PART NUMBER  
TPS28226  
TEMPERATURE RANGE, TA = TJ  
PACKAGE  
TAPE AND REEL QTY.  
Plastic 8-pin SOIC (D)  
Plastic 8-pin SOIC (D)  
Plastic 8-pin DFN (DRB)  
Plastic 8-pin DFN (DRB)  
75 per tube  
2500  
TPS28226D  
TPS28226DR  
TPS28226DRBT  
TPS28226DRBR  
-40C to 125C  
250  
3000  
(1) SOIC-8 (D) and DFN-8 (DRB) packages are available taped and reeled. Add T suffix to device type (e.g. TPS28226DRBT) to order  
taped devices and suffix R (e.g. TPS28226DRBR) to device type to order reeled devices.  
(2) The SOIC-8 (D) and DFN-8 (DRB) package uses in Pb-Free lead finish of Pd-Ni-Au which is compatible with MSL level 1 at 255C to  
260C peak reflow temperature to be compatible with either lead free or Sn/Pb soldering operations.  
(3) In the DFN package, the pad underneath the center of the device is a thermal substrate. The PCB “thermal land” design for this  
exposed die pad should include thermal vias that drop down and connect to one or more buried copper plane(s). This combination of  
vias for vertical heat escape and buried planes for heat spreading allows the DFN to achieve its full thermal potential. This pad should  
be either grounded for best noise immunity, and it should not be connected to other nodes.  
4
Submit Documentation Feedback  
Copyright © 2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS28226  

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