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TPS28226 PDF预览

TPS28226

更新时间： 2024-01-28 19:23:16
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
35页 1135K
描述
High-Frequency 4-A Sink Synchronous MOSFET Drivers

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TPS28226 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.37
高边驱动器：YES接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：4.89 mm功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
座面最大高度：1.75 mm最大供电电压：8 V
最小供电电压：6.8 V标称供电电压：7.2 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：NICKEL PALLADIUM GOLD端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

TPS28226 数据手册

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TPS28226  
www.ti.com  
SLUS791–OCTOBER 2007  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
(1)(2)  
TPS28226  
VALUE  
UNIT  
–0.3 to 8.8  
(3)  
Input supply voltage range, VDD  
Boot voltage, VBOOT  
–0.3 to 33  
DC  
Phase voltage, VPHASE  
–2 to 32 or VBOOT + 0.3 – VDD whichever is less  
–7 to 33.1 or VBOOT + 0.3 – VDD whichever is less  
–0.3 to 13.2  
Pulse < 400 ns, E = 20 μJ  
Input voltage range, VPWM, VEN/PG  
VPHASE – 0.3 to VBOOT + 0.3, (VBOOT – VPHASE < 8.8)  
V
Output voltage range, VUGATE  
Pulse < 100 ns, E = 2 μJ  
VPHASE – 2 to VBOOT + 0.3, (VBOOT – VPHASE < 8.8)  
–0.3 to VDD + 0.3  
Output voltage range, VLGATE  
Pulse < 100 ns, E = 2 μJ  
–2 to VDD + 0.3  
ESD rating, HBM  
2 k  
ESD rating, HBM ESD rating, CDM  
Continuous total power dissipation  
Operating virtual junction temperature range, TJ  
Operating ambient temperature range, TA  
Storage temperature, Tstg  
500  
See Dissipation Rating Table  
–40 to 150  
–40 to 125  
–65 to 150  
300  
°C  
Lead temperature (soldering, 10 sec.)  
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating  
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) These devices are sensitive to electrostatic discharge; follow proper device handling procedures.  
(3) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. Consult  
Packaging Section of the Data book for thermal limitations and considerations of packages.  
DISSIPATION RATINGS(1)  
DERATING FACTOR  
ABOVE TA = 25°C  
TA < 25°C  
POWER RATING  
TA =70°C  
POWER RATING  
TA = 85°C  
POWER RATING  
BOARD  
PACKAGE  
RθJC  
RθJA  
High-K(2)  
High-K(3)  
D
39.4°C/W  
1.4°C/W  
100C/W  
48.5C/W  
10 mW/C  
1.25 W  
2.58 W  
0.8 W  
0.65 W  
1.34 W  
DRB  
20.6 mW/C  
1.65 W  
(1) These thermal data are taken at standard JEDEC test conditions and are useful for the thermal performance comparison of different  
packages. The cooling condition and thermal impedance RθJA of practical design is specific.  
(2) The JEDEC test board JESD51-7, 3-inch x 3-inch, 4-layer with 1-oz internal power and ground planes and 2-oz top and bottom trace  
layers.  
(3) The JEDEC test board JESD51-5 with direct thermal pad attach, 3-inch x 3-inch, 4-layer with 1-oz internal power and ground planes and  
2-oz top and bottom trace layers.  
RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
6.8  
3
TYP  
MAX  
8
UNIT  
V
VDD Input supply voltage  
7.2  
VIN  
TJ  
Power input voltage  
32 V–VDD  
125  
Operating junction temperature range  
–40  
C
Copyright © 2007, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Link(s): TPS28226  
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