是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | TSSOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 1 week |
风险等级: | 5.24 | Is Samacsys: | N |
其他特性: | ALSO REQUIRES 8V TO 40 V REGULATOR INPUT SUPPLY | 高边驱动器: | YES |
输入特性: | GATED SCHMITT TRIGGER | 接口集成电路类型: | NAND GATE BASED MOSFET DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
长度: | 4.4 mm | 湿度敏感等级: | 1 |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
输出特性: | TOTEM-POLE | 最大输出电流: | 2 A |
标称输出峰值电流: | 2 A | 输出极性: | INVERTED |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | SSOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 峰值回流温度(摄氏度): | 260 |
电源: | 10 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 子类别: | MOSFET Drivers |
最大压摆率: | 0.005 mA | 最大供电电压: | 14 V |
最小供电电压: | 4 V | 标称供电电压: | 10 V |
表面贴装: | YES | 技术: | BIMOS |
温度等级: | AUTOMOTIVE | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.05 µs | 接通时间: | 0.05 µs |
宽度: | 3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TPS2811PWLE | TI |
完全替代 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811QPWRQ1 | TI |
完全替代 |
DUAL HIGH-SPEED MOSFET DRIVER | |
TPS2811PW | TI |
完全替代 |
DUAL HIGH-SPEED MOSFET DRIVERS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPS2811PWRG4 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811-Q1 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVER | |
TPS2811QPWRQ1 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVER | |
TPS2811Y | TI |
获取价格 |
暂无描述 | |
TPS2812 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVERS | |
TPS2812D | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVERS | |
TPS2812DG4 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2812DR | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVERS | |
TPS2812DRG4 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2812P | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVERS |