是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | TSSOP, TSSOP8,.25 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 1 week |
风险等级: | 1.13 | 其他特性: | ALSO REQUIRES 8V TO 40 V REGULATOR INPUT SUPPLY |
高边驱动器: | YES | 输入特性: | GATED SCHMITT TRIGGER |
接口集成电路类型: | NAND GATE BASED MOSFET DRIVER | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 4.4 mm |
湿度敏感等级: | 1 | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 输出特性: | TOTEM-POLE |
最大输出电流: | 2 A | 标称输出峰值电流: | 2 A |
输出极性: | INVERTED | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
峰值回流温度(摄氏度): | 260 | 电源: | 10 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
子类别: | MOSFET Drivers | 最大压摆率: | 0.005 mA |
最大供电电压: | 14 V | 最小供电电压: | 4 V |
标称供电电压: | 10 V | 表面贴装: | YES |
技术: | BIMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.05 µs |
接通时间: | 0.05 µs | 宽度: | 3 mm |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TPS2811PWR | TI |
完全替代 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811PWLE | TI |
完全替代 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811QPWRQ1 | TI |
完全替代 |
DUAL HIGH-SPEED MOSFET DRIVER |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPS2811PWG4 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811PWLE | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811PWR | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811PWRG4 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS | |
TPS2811-Q1 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVER | |
TPS2811QPWRQ1 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVER | |
TPS2811Y | TI |
获取价格 |
暂无描述 | |
TPS2812 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVERS | |
TPS2812D | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIVERS | |
TPS2812DG4 | TI |
获取价格 |
DUAL HIGH-SPEED MOSFET DRIBERS |