是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | HVQCCN, |
Reach Compliance Code: | compliant | Factory Lead Time: | 6 weeks |
风险等级: | 1.64 | 可调阈值: | YES |
模拟集成电路 - 其他类型: | POWER SUPPLY SUPPORT CIRCUIT | JESD-30 代码: | R-PQCC-N20 |
JESD-609代码: | e4 | 长度: | 3 mm |
湿度敏感等级: | 2 | 信道数量: | 1 |
功能数量: | 1 | 端子数量: | 20 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
最大输出电流: | 5.3 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HVQCCN | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 筛选级别: | AEC-Q100 |
座面最大高度: | 0.75 mm | 最大供电电流 (Isup): | 0.3 mA |
最大供电电压 (Vsup): | 18 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
温度等级: | AUTOMOTIVE | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 宽度: | 4 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TPS25940AQRVCRQ1 | TI |
完全替代 |
具有电流监控器和电池短路保护功能的 2.7V 至 18V、42mΩ、0.6A 至 5.3A |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPS25940ARVCR | TI |
获取价格 |
18V eFuse with True Reverse Blocking and DevSleep Support for SSDs | |
TPS25940ARVCT | TI |
获取价格 |
18V eFuse with True Reverse Blocking and DevSleep Support for SSDs | |
TPS25940L | TI |
获取价格 |
18V eFuse with True Reverse Blocking and DevSleep Support for SSDs | |
TPS25940L-Q1 | TI |
获取价格 |
TPS25940x-Q1 2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection | |
TPS25940LQRVCRQ1 | TI |
获取价格 |
TPS25940x-Q1 2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection | |
TPS25940LRVCR | TI |
获取价格 |
18V eFuse with True Reverse Blocking and DevSleep Support for SSDs | |
TPS25940LRVCT | TI |
获取价格 |
18V eFuse with True Reverse Blocking and DevSleep Support for SSDs | |
TPS25940-Q1 | TI |
获取价格 |
具有电流监控器和电池短路保护功能的 2.7V 至 18V、42mΩ、0.6A 至 5.3A | |
TPS25940-Q1_V01 | TI |
获取价格 |
TPS25940x-Q1 2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection | |
TPS25940XEVM-635 | TI |
获取价格 |
18V eFuse with True Reverse Blocking and DevSleep Support for SSDs |