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TPS2103DR

更新时间： 2024-11-20 20:33:39
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
20页 455K
描述
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, PLASTIC, SOIC-8

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中文翻译

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TPS2103DR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.32可调阈值：NO
模拟集成电路 - 其他类型：POWER SUPPLY SUPPORT CIRCUITJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
信道数量：1功能数量：1
端子数量：8最高工作温度：70 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3.3 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：Power Management Circuits最大供电电流 (Isup)：0.024 mA
最大供电电压 (Vsup)：4 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
温度等级：OTHER端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.905 mmBase Number Matches：1

TPS2103DR 数据手册

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TPS2102, TPS2103  
POWER-DISTRIBUTION SWITCHES  
V
AUX  
SLVS234A – SEPTEMBER 1999 – REVISED APRIL 2000  
features  
typical applications  
Dual-Input, Single-Output MOSFET Switch  
With No Reverse Current Flow (No Parasitic  
Diodes)  
Notebook and Desktop PCs  
Cell phone, Palmtops, and PDAs  
Battery Management  
IN1 . . . 250-mΩ, 500-mA N-Channel;  
14-µA Supply Current  
TPS2102  
IN1  
IN2 . . . 1.3-Ω, 100-mA P-Channel;  
Controller  
(CardBus,  
1394,  
PCI,  
et al.)  
0.75-µA Supply Current (V  
Mode)  
AUX  
3.3 V V  
3.3 V  
CC  
Advanced Switch Control Logic  
IN2  
3.3 V V  
AUX  
CMOS and TTL Compatible Enable Input  
Controlled Rise, Fall, and Transition Times  
2.7 V to 4 V Operating Range  
EN  
D3 or PME Status  
Control Signal  
Holdup  
Capacitor  
SOT-23-5 and SOIC-8 Package  
–40°C to 70°C Ambient Temperature Range  
Figure 1. Typical Dual-Input Single-Output  
Application  
2-kV Human Body Model, 750-V Charged  
Device Model, 200-V Machine-Model  
ESD Protection  
description  
The TPS2102 and TPS2103 are dual-input, single-output power switches designed to provide uninterrupted  
output voltage when transitioning between two independent power supplies. Both devices combine one  
n-channel (250 mΩ) and one p-channel (1.3 Ω) MOSFET with a single output. The p-channel MOSFET (IN2)  
is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET  
(IN1) is used with a main power supply that delivers higher current required for normal operation. Low  
on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation  
and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to  
0.75 µA to decrease the demand on the standby power supply. The MOSFETs in the TPS2102 and TPS2103  
do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current  
when the switch is off.  
TPS2102  
D PACKAGE  
(TOP VIEW)  
(TOP VIEW)  
DBV PACKAGE  
PCI Bus  
V
3.3 V  
AUX  
IN2  
GND  
EN  
OUT  
OUT  
NC  
1
2
3
4
8
7
6
5
IN1  
1
2
3
5
4
EN  
GND  
IN2  
OUT  
NC  
IN1  
VGA  
TPS210x  
D3-STAT  
TPS2103  
V
CC  
D PACKAGE  
(TOP VIEW)  
DBV PACKAGE  
(TOP VIEW)  
PCI12xx / PCI14xx  
CardBus Controller  
IN2  
GND  
EN  
OUT  
OUT  
NC  
1
2
3
4
8
7
6
5
EN  
GND  
IN2  
IN1  
1
2
3
5
4
Figure 2. V  
CardBus Implementation  
AUX  
OUT  
NC  
IN1  
NC – No internal connection  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...20

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