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TPS2105DBV PDF预览

TPS2105DBV

更新时间： 2024-11-19 22:42:03
品牌 Logo 应用领域
德州仪器 - TI 模拟IC开关信号电路光电二极管
页数 文件大小 规格书
16页 241K
描述
VAUX POWER-DISTRIBUTION SWITCHES

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TPS2105DBV 技术参数

生命周期：Obsolete零件包装代码：SOT-23
包装说明：SOT-23, 5 PIN针数：5
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.05Is Samacsys：N
模拟集成电路 - 其他类型：ANALOG CIRCUITJESD-30 代码：R-PDSO-G5
长度：2.9 mm功能数量：1
端子数量：5最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：LSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH认证状态：Not Qualified
座面最大高度：1.45 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：5 V
表面贴装：YES温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUAL宽度：1.6 mm
Base Number Matches：1

TPS2105DBV 数据手册

 浏览型号TPS2105DBV的Datasheet PDF文件第2页浏览型号TPS2105DBV的Datasheet PDF文件第3页浏览型号TPS2105DBV的Datasheet PDF文件第4页浏览型号TPS2105DBV的Datasheet PDF文件第5页浏览型号TPS2105DBV的Datasheet PDF文件第6页浏览型号TPS2105DBV的Datasheet PDF文件第7页 
TPS2104, TPS2105  
POWER-DISTRIBUTION SWITCHES  
V
AUX  
SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000  
features  
typical applications  
Dual-Input, Single-Output MOSFET Switch  
With No Reverse Current Flow (No Parasitic  
Diodes)  
Notebook and Desktop PCs  
Cell phone, Palmtops, and PDAs  
Battery Management  
IN1 . . . 250-mΩ, 500-mA N-Channel;  
18-µA Supply Current  
TPS2104  
IN1  
IN2 . . . 1.3-Ω, 100-mA P-Channel;  
0.75-µA Supply Current (V  
Mode)  
AUX  
5 V V  
5 V  
CC  
Advanced Switch Control Logic  
LOAD  
IN2  
5 V V  
AUX  
CMOS and TTL Compatible Enable Input  
Controlled Rise, Fall, and Transition Times  
2.7 V to 5.5 V Operating Range  
EN  
Holdup  
Capacitor  
Control Signal  
SOT-23-5 and SOIC-8 Package  
–40°C to 85°C Ambient Temperature Range  
Figure 1. Typical Dual-Input Single-Output  
Application  
2-kV Human Body Model, 750-V Charged  
Device Model, 200-V Machine-Model  
ESD Protection  
description  
The TPS2104 and TPS2105 are dual-input, single-output power switches designed to provide uninterrupted  
output voltage when transitioning between two independent power supplies. Both devices combine one  
n-channel (250 mΩ) and one p-channel (1.3 Ω) MOSFET with a single output. The p-channel MOSFET (IN2)  
is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET  
(IN1) is used with a main power supply that delivers higher current required for normal operation. Low  
on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation  
and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to  
0.75 µA to decrease the demand on the standby power supply. The MOSFETs in the TPS2104 and TPS2105  
do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current  
when the switch is off.  
TPS2104  
D PACKAGE  
(TOP VIEW)  
(TOP VIEW)  
DBV PACKAGE  
IN2  
GND  
EN  
OUT  
OUT  
NC  
1
2
3
4
8
7
6
5
IN1  
1
2
3
5
4
EN  
GND  
IN2  
OUT  
NC  
IN1  
TPS2105  
D PACKAGE  
(TOP VIEW)  
DBV PACKAGE  
(TOP VIEW)  
IN2  
GND  
EN  
OUT  
OUT  
NC  
1
2
3
4
8
7
6
5
EN  
GND  
IN2  
IN1  
1
2
3
5
4
OUT  
NC  
IN1  
NC – No internal connection  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...16

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