Datasheet > TPN3300ANH(TE12L1)

TPN3300ANH(TE12L1)

更新时间： 2024-11-05 19:44:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	234K
描述
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,21A I(D),LLCC

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TPN3300ANH(TE12L1) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	21 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	27 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

TPN3300ANH(TE12L1) 数据手册

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TPN3300ANH

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN3300ANH

1. Applications

•

DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) Small, thin package

(2) High-speed switching

(3) Small gate charge: QSW = 4.5 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

100

±20

(Silicon limit)

(Tc = 25 )

(t = 1 ms)

(Note 1), (Note 2)

(Note 1)

9.4

(Note 1)

IDP

(Tc = 25 )

(t = 10 s)

(Note 3)

(Note 4)

(Note 5)

1.9

(t = 10 s)

0.7

Single-pulse avalanche energy

Avalanche current

EAS

IAR

Tch

Tstg

9.4

Channel temperature

Storage temperature

150

-55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-08-31

Rev.2.0

12 3 4 5 6 7...9

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