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TPMR10G PDF预览

TPMR10G

更新时间: 2024-11-25 01:10:55
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描述
10A, 200V - 600V High Current Density Switchmode Ultrafast Surface Mount Rectifiers

TPMR10G 数据手册

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TPMR10D - TPMR10J  
Taiwan Semiconductor  
CREAT BY ART  
10A, 200V - 600V  
High Current Density Switchmode Ultrafast Surface Mount Rectifiers  
FEATURES  
- Very low profile, typical height of 1.1mm  
- 175oC operating junction temperature  
- Glass passivated chip junction  
- Low conduction loss  
- Low leakage current  
- High forward surge capability  
TO-277A (SMPC)  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
The devices were designed with a priority on VF to minimize the conduction  
losses as secondary rectification of SMPS, while the diodes remain fast enough  
to fit applications where the switching frequency is counted in tens of kilohertz.  
The miniature high power density surface mount packages is perfect for space  
constraint design.  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound, UL flammability classification rating 94V-0  
Moisture sensitivity level: level 1, per J-STD-020  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: Indicated by cathode band  
Weight: 0.095 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
TPMR10D TPMR10G TPMR10J  
SYMBOL  
UNIT  
Marking code  
MR10D  
200  
MR10G  
400  
MR10J  
600  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current  
VRRM  
IF(AV)  
V
A
10  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
VF  
IR  
150  
A
V
Maximum instantaneous forward voltage (1)  
@ 10 A  
TJ=25°C  
TJ=125°C  
0.95  
0.86  
5
1.20  
1.00  
1.80  
-
Maximum reverse current @ rated VR TJ=25oC  
TJ=125oC  
10  
μA  
ns  
250  
500  
IF=1A, di/dt=-50A/μs, VR=30V  
60  
35  
-
Maximum reverse  
recovery time  
trr  
IF=0.5A, IR=1A, IRR=0.25A  
40  
(2)  
8.4  
78  
RθJL  
Typical thermal resistance  
°C/W  
(3)  
RθJA  
Typical junction capacitance (4)  
Operating junction temperature range  
Storage temperature range  
CJ  
TJ  
140  
pF  
°C  
°C  
- 55 to +175  
- 55 to +175  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Mounted on FR4 PCB with 16mm x 16mm Cu pad area  
Note 3: Free air, mounted on recommned pad  
Note 4: Measured at 1 MHz and Applied VR=4.0 Volts  
Document Number: DS_D1501002  
Version: A15  

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