Datasheet > TPD65R450CFD

TPD65R450CFD

更新时间： 2024-03-03 10:09:38

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
13页	826K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPD65R450CFD 数据手册

TPA65R450CFD,TPB65R450CFD,TPC65R450CFD,TPD65R450CFD,TPP65R450CFD,TPU65R450CFD

Wuxi Unigroup Microelectronics Company

Specifications T_J= 25ºC , unless otherwise noted

Value

Parameter

Symbol

Test Conditions

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V_(BR)DSS

V_GS= 0V, I_D= 250µA

V_DS= 650V, V_GS= 0V, T_J= 25ºC

V_DS= 650V, V_GS= 0V, T_J= 150ºC

V_GS= ±30V

650

Zero Gate Voltage Drain Current

I_DSS

μA

5000

±100

4.5

Gate-Source Leakage

I_GSS

Gate-Source Threshold Voltage

V_GS(th)

V_DS= V_GS, I_D= 250µA

2.5

Drain-Source On-Resistance

R_DS(on)

g_fs

V_GS= 10V, I_D= 5.5A

V_DS= 10V, I_D= 5.5A

0.38

7.8

0.45

Ω

Forward Transconductance (Note3)

Dynamic

Input Capacitance

C_iss

C_oss

C_rss

Q_g

902

V_GS= 0V,

V_DS= 50V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

5.3

V_DD= 520V, I_D= 11A,

V_GS= 10V

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Turn-on Rise Time

Q_gs

Q_gd

t_d(on)

t_r

4.3

6.9

V_DD= 400V, I_D= 11A,

R_G= 25Ω

Turn-off Delay Time

Turn-off Fall Time

t_d(off)

t_f

121

6.5

Drain-Source Body Diode Characteristics

Body Diode Voltage

V_SD

T_J= 25ºC, I_SD= 11A, V_GS= 0V

0.9

1.2

Reverse Recovery Time

t_rr

0.43

μC

V_R= 480V, I_F= I_S,

di_F/dt = 100A/μs

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

I_rrm

Notes

1. Repetitive Rating: Pulse Width limited by maximum junction temperature

2. I_AS=1.6A,V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%

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