Datasheet > TPA60R530M

TPA60R530M

更新时间： 2024-04-09 18:59:24

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
12页	829K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TPA60R530M 数据手册

TPA60R530M,TPD60R530M,TPR60R530M,TPU60R530M

Wuxi Unigroup Microelectronics Co.,Ltd

Electrical Characteristics T_J= 25ºC, unless otherwise noted

Value

Typ.

Parameter

Symbol

Test Conditions

Unit

Min.

Max.

Static Characteristics

Drain-Source Breakdown Voltage

V_(BR)DSS

V_GS= 0V, I_D= 250µA

V_DS= 600V, V_GS= 0V, T_J= 25ºC

V_DS= 600V, V_GS= 0V, T_J= 150ºC

V_GS= ±30V

600

Zero Gate Voltage Drain Current

I_DSS

μA

100

±100

4.5

Gate-Source Leakage Current

Gate-Source Threshold Voltage

I_GSS

V_GS(th)

V_DS= V_GS, I_D= 250µA

2.5

Drain-Source On-State-Resistance

R_DS(on)

R_G

V_GS= 10V, I_D= 3.5A

f = 1.0MHz open drain

0.46

0.53

Ω

Gate Resistance

Dynamic Characteristics

Input Capacitance

C_iss

C_oss

C_rss

Q_g

526

V_GS= 0V,

V_DS= 100V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

1.6

13.8

2.8

5.6

V_DD= 480V, I_D= 7A,

V_GS= 10V

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Q_gs

Q_gd

t_d(on)

t_r

V_DD= 400V, I_D= 7A,

R_G= 25Ω

t_d(off)

t_f

102

Drain-Source Body Diode Characteristics

Body Diode Forward Voltage

Reverse Recovery Time

V_SD

t_rr

T_J= 25ºC, I_SD=3.5 A, V_GS= 0V

0.9

321

3.4

1.2

μC

V_R= 400V, I_F= 7A,

di_F/dt = 100A/μs

Reverse Recovery Charge

Q_rr

I_rrm

Peak Reverse Recovery Current

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I_AS= 1.3A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

3. Identical low side and high side switch with identical R_G

V1.0

www.tsinghuaicwx.com

1 234 5 6 7...12

中文翻译

下载PDF

与TPA60R530M相关器件

型号	品牌	获取价格	描述	数据表
TPA60R580C	WUXI UNIGROUP	获取价格	超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采
TPA60R600MFD	WUXI UNIGROUP	获取价格	Multi-EPI超结功率MOSFET(Multi-EPI Super Junction
TPA60R700C	WUXI UNIGROUP	获取价格	超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采
TPA60R840C	WUXI UNIGROUP	获取价格	超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采
TPA6100A2	TI	获取价格	50mW 立体声模拟输入耳机放大器
TPA6100A2D	TI	获取价格	50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
TPA6100A2D_06	TI	获取价格	50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
TPA6100A2DGK	TI	获取价格	50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
TPA6100A2DGKG4	TI	获取价格	50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
TPA6100A2DGKR	TI	获取价格	50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER