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TPA6100A2DGKR PDF预览

TPA6100A2DGKR

更新时间: 2024-11-25 03:58:47
品牌 Logo 应用领域
德州仪器 - TI 消费电路商用集成电路音频放大器视频放大器功率放大器光电二极管
页数 文件大小 规格书
11页 257K
描述
50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER

TPA6100A2DGKR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:MSOP
包装说明:VSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:0.57Is Samacsys:N
标称带宽:20 kHz商用集成电路类型:AUDIO AMPLIFIER
谐波失真:0.1%JESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:3 mm
湿度敏感等级:1信道数量:2
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
标称输出功率:0.05 W封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.19
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:1.8/3.3 V
认证状态:Not Qualified座面最大高度:1.07 mm
子类别:Audio/Video Amplifiers最大压摆率:1.2 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.6 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

TPA6100A2DGKR 数据手册

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TPA6100A2D  
www.ti.com  
SLOS269BJUNE 2000REVISED SEPTEMBER 2004  
50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER  
FEATURES  
D PACKAGE  
(TOP VIEW)  
50-mW Stereo Output  
Low Supply Current . . . 0.75 mA  
Low Shutdown Current . . . 50 nA  
Pin Compatible With LM4881 and TPA102  
Pop Reduction Circuitry  
BYPASS  
GND  
SHUTDOWN  
IN2–  
IN1–  
V 1  
1
2
3
4
8
7
6
5
O
(1)  
V
DD  
V 2  
O
Internal Midrail Generation  
Thermal and Short-Circuit Protection  
Surface-Mount Packaging  
DGK PACKAGE  
(TOP VIEW)  
– MSOP and SOIC  
BYPASS  
GND  
SHUTDOWN  
IN2–  
IN1–  
1
2
3
4
8
7
6
5
1.6-V to 3.6-V Supply Voltage Range  
V 1  
O
V
DD  
V 2  
O
(1) The polarity of the SHUTDOWN pin is reversed.  
DESCRIPTION  
The TPA6100A2D is a stereo audio power amplifier packaged in either an 8-pin SOIC package or an 8-pin  
MSOP package capable of delivering 50 mW of continuous RMS power per channel into 16-loads. Amplifier  
gain is externally configured by a means of three resistors per input channel and does not require external  
compensation for settings of 1 to 10.  
The TPA6100A2D is optimized for battery applications because of its low supply current, shutdown current, and  
THD+N. To obtain the low-supply voltage range, the TPA6100A2D biases BYPASS to VDD/4. A resistor with a  
resistance equal to RF must be added from the inputs to ground to allow the output to be biased at VDD/2.  
When driving a 16-load with 45-mW output power from 3.3 V, THD+N is 0.04% at 1 kHz, and less than 0.2%  
across the audio band of 20 Hz to 20 kHz. For 28 mW into 32-loads, the THD+N is reduced to less than 0.03%  
at 1 kHz, and is less than 0.2% across the audio band of 20 Hz to 20 kHz.  
TYPICAL APPLICATION CIRCUIT  
V
6
7
R
DD  
F
V
DD  
Audio  
Input  
C
V
DD  
/4  
S
R
I
IN1−  
8
1
V 1  
O
+
R
C
I
C
C
BYPASS  
C
C
B
Audio  
Input  
R
I
IN2−  
4
V 2  
O
+
5
2
R
C
I
C
SHUTDOWN  
Bias  
3
From Shutdown  
Control Circuit  
Control  
R
F
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2000–2004, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

TPA6100A2DGKR 替代型号

型号 品牌 替代类型 描述 数据表
TPA6100A2DGKRG4 TI

完全替代

50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
TPA6100A2DGK TI

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50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
TPA6100A2D TI

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50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER

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