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TP86R203NL PDF预览

TP86R203NL

更新时间: 2023-12-06 20:13:20
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 255K
描述
N-ch MOSFET, 30 V, 0.0062 Ω@10V, SOP-8, U-MOSⅧ-H

TP86R203NL 数据手册

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TP86R203NL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TP86R203NL  
1. Applications  
Switching Voltage Regulators  
DC-DC Converters  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 4.3 nC (typ.)  
(3) Low drain-source on-resistance: RDS(ON) = 7.0 m(typ.) (VGS = 4.5 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP-8  
Start of commercial production  
2013-05  
2014-02-25  
Rev.2.0  
1

TP86R203NL 替代型号

型号 品牌 替代类型 描述 数据表
RMW200N03TB ROHM

功能相似

Power Field-Effect Transistor, 20A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me

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