Datasheet > TP5335_07

TP5335_07

更新时间： 2024-11-11 03:26:51

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	397K
描述
P-Channel Enhancement-Mode Vertical DMOS FET

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TP5335_07 数据手册

TP5335

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

The Supertex TP5335 is a low threshold enhancement-

mode (normally-off) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

► High input impedance and high gain

► Low power drive requirement

► Ease of paralleling

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► Free from secondary breakdown

► Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Applications

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Analog switches

► Power management

► Telecom switches

Pin Conﬁguration

Ordering Information

Drain

Package Options

TO-236AB

BV_DSs

R_DS(ON)

V_GS(TH)

(max)

BV_DGs

-352V

32Ω

-±.4V

TP5335K1 TP5335K1-G

-G indicates package is RoHS compliant (‘Green’)

Gate

Source

TO-236AB

(Top View)

Absolute Maximum Ratings

Parameter

Product Marking Information

Value

BV_DSS

BV_DGS

±±2V

Product marking for SOT-±3:

P3S

Drain-to-source voltage

Drain-to-gate voltage

where = ±-week alpha date code

Underline indicates Pb-Free (”Green”)

Gate-to-source voltage

Operating and storage

temperature

-55^OC to +152^OC

Soldering temperature*

322^OC

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

12 3

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与TP5335_07相关器件

型号	品牌	获取价格	描述	数据表
TP5335K1	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP5335K1-G	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP5335NW	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP5358	VISHAY	获取价格	Transistor
TP5358R	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TP5358R-STYLE-B	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TP5358R-STYLE-C	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TP5358R-STYLE-E	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TP5358R-STYLE-F	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TP5358R-STYLE-G	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A

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