TP3024B

更新时间： 2024-02-22 08:45:36

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
2页	54K
描述
UHF LINEAR POWER TRANSISTOR

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TP3024B 数据手册

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

The TP3024B is a balanced transistor designed specifically for use in cellular

radio systems. This device permits the design of a Class AB push–pull, high

gain, broadband amplifier having a high degree of linearity without the need for

complicated biasing circuitry.

•

Specified 26 Volts, 960 MHz Characteristics:

Output Power = 35.5 W

35.5 W, 960 MHz

UHF LINEAR POWER

TRANSISTOR

Minimum Gain = 7.5 dB

= 150 mA

total

•

Push–Pull Configuration

MAXIMUM RATINGS

Rating

Symbol

Value

4.0

Unit

Vdc

°C

Emitter–Base Voltage

EBO

Operating Junction Temperature

Storage Temperature Range

200

stg

–65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (1)

(T = 75°C)

3.0

°C/W

θJC

CASE 395B–01, STYLE 1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 10 mA, R = 75 Ohms)

—

5.0

—

Vdc

(BR)CER

Collector–Emitter Leakage

(V = 26 V, R = 75 Ohms)

CER

CE BE

Emitter–Base Breakdown Voltage

(I = 5.0 mAdc, I = 0)

3.5

—

(BR)EBO

Emitter–Base Leakage

(V = 2.5 V)

1.0

EBO

ON CHARACTERISTICS (2)

DC Current Gain

(I = 500 mA, V

C CE

—

100

—

= 10 V)

DYNAMIC CHARACTERISTICS (1)

Output Capacitance

= 24 V, I = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (3)

Common–Emitter Amplifier Power Gain

7.5

—

= 26 V, P

out

= 35.5 W, f = 960 MHz, Q

= 150 mA)

total

Collector Efficiency

(V = 26 V, P

= 35.5 W, f = 960 MHz, Q

CE out

NOTE:

1. Thermal resistance is determined under specified RF operating condition.

2. Each transistor chip measured separately.

3. Both transistor chips operating in push–pull amplifier.

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1994

TP3024B

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