Datasheet > TO-236AB

TO-236AB

更新时间： 2024-11-01 12:00:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	153K
描述
20 v, 3.5A P-channel Trench MOSFET

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数据手册

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TO-236AB 数据手册

PMV48XP

20 V, 3.5 A P-channel Trench MOSFET

Rev. 1 — 21 December 2010

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

1.3 Applications

High-side loadswitch

High-speed line driver

Relay driver

Switching circuits

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_amb= 25 °C

-20

V_GS

I_D

gate-source

voltage

-12

[1]

drain current

V_GS= -4.5 V; T_amb= 25 °C

-3.5

Static characteristics

R_DSondrain-source

V_GS= -4.5 V; I_D= -2.4 A;

pulsed; t_p≤ 300 µs; δ ≤ 0.01;

T_j= 25 °C

mΩ

on-state

resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...15

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