Datasheet > TN815-B

TN815-B

更新时间： 2024-09-30 22:29:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
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5页	77K
描述
SCR’s

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数据手册

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TN815-B 数据手册

TN805/TN815-B

SCR’s

FEATURES

I_TRMS= 8 A

V_DRM= 400 V to 800 V

≤

I_GT5 mA and 15 mA

DESCRIPTION

The TN805/TN815-B serie of Silicon Controlled

Rectifiers uses a high performance TOPGLASS

PNPN technology.

These parts are intended for general purpose

applications using mount technology.

DPAK

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

RMS on-state current

(180 conduction angle)

I_T(RMS)

Tc= 105 C

I_T(AV)

I_TSM

Mean on-state current

Tc= 105°C

(180 conduction angle)

Non repetitive surge peak on-state current

(Tj initial = 25°C)

tp = 8.3 ms

tp = 10 ms

tp = 10ms

I²t

I²t Value for fusing

24.5

100

A²s

A/ s

dI/dt

Critical rate of rise of on-state current

dI_G/dt = 1 A/ s.

I_G= 100 mA

Storage junction temperature range

Operating junction temperature range

T_stg

T_j

- 40 to + 150

- 40 to + 125

Maximum lead temperature for soldering during 10s

260

TN805 or TN815

Symbol

Parameter

Unit

400B

600B

700B

700

800B

V_DRM

V_RRM

Repetitive peak-off voltage

Tj = 125°C

400

600

800

August 1998 - Ed: 1A

1/5

12 3 4 5

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