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TN5D61A-HB11-E PDF预览

TN5D61A-HB11-E

更新时间： 2024-11-08 15:54:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 144K
描述
Separately-Excited Step-Down Switching Regulator (24 V Output), 50-FNFLD

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中文翻译

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TN5D61A-HB11-E 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：compliant
Factory Lead Time：1 week风险等级：5.75
控制模式：VOLTAGE-MODEJESD-30 代码：R-PZIP-T5
JESD-609代码：e6端子数量：5
最高工作温度：85 °C最低工作温度：-10 °C
最大输出电流：5 A封装主体材料：PLASTIC/EPOXY
封装代码：ZIP封装等效代码：ZIP5,.15,.1,100/50TB
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Not Qualified子类别：Switching Regulator or Controllers
表面贴装：NO最大切换频率：180 kHz
温度等级：OTHER端子面层：Tin/Bismuth (Sn/Bi)
端子形式：THROUGH-HOLE端子节距：1.27 mm
端子位置：ZIG-ZAGBase Number Matches：1

TN5D61A-HB11-E 数据手册

 浏览型号TN5D61A-HB11-E的Datasheet PDF文件第2页浏览型号TN5D61A-HB11-E的Datasheet PDF文件第3页浏览型号TN5D61A-HB11-E的Datasheet PDF文件第4页浏览型号TN5D61A-HB11-E的Datasheet PDF文件第5页浏览型号TN5D61A-HB11-E的Datasheet PDF文件第6页浏览型号TN5D61A-HB11-E的Datasheet PDF文件第7页 
Ordering number : ENA1240  
SANYO Sem iconductors  
DATA S HEET  
ExPD (Excellent-Performance Power & RF Device)  
Separately-Excited Step-Down  
Switching Regulator (24V Output type)  
TN5D61A  
Features  
• High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).  
• Over current protection function (Self recovery type).  
• Under voltage protection function.  
• Over temperature protection function (Self recovery type).  
• Soft start function (Variable subject to externally-connected capacitor).  
• Stand-by mode function (Compatible with soft start terminal).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Maximum Input Voltage  
Symbol  
max  
Conditions  
Ratings  
Unit  
V
V
57  
5
IN  
max  
Maximum Output Current  
I
A
O
Drain-to-Source Voltage of built-in MOSFET  
Drain Current of built-in MOSFET (DC)  
Drain Current of built-in MOSFET (Pulse)  
FB Pin Maximum Input Voltage  
V
--60  
-- 9  
V
DSS  
I
I
A
D
PW≤10μs, duty cycle≤1%  
--36  
30  
7
A
DP  
V
fb  
V
SS Pin Maximum Input Voltage  
V
SS  
V
2.0  
15  
W
W
°C  
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
Operating Temperature  
Junction Temperature  
Storage Temperature  
Topr  
Tj  
--25 to +125  
150  
Tstg  
--55 to +150  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
N1208IQ MS IM TC-00001714 No. A1240-1/11  
1234567...11

中文翻译

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