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TN5125PM PDF预览

TN5125PM

更新时间: 2024-11-08 21:19:31
品牌 Logo 应用领域
APITECH 射频微波
页数 文件大小 规格书
1页 76K
描述
Narrow Band Medium Power Amplifier, 10MHz Min, 100MHz Max, SM3, 4 PIN

TN5125PM 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.69其他特性:I/P POWER-MAX (PEAK)=27DBM
构造:COMPONENT增益:19.5 dB
最大输入功率 (CW):13 dBm最大工作频率:100 MHz
最小工作频率:10 MHz最高工作温度:85 °C
最低工作温度:-55 °C射频/微波设备类型:NARROW BAND MEDIUM POWER
最大电压驻波比:2Base Number Matches:1

TN5125PM 数据手册

  
Available as: TM5125PM, 4 Pin TO-8 (T4)  
TN5125PM, 4 Pin Surface Mount (SM3)  
RFAMPLIFIER  
BX5125PM, Connectorized Housing (H1)  
MODEL TM5125PM  
Features  
Typical Intermodulation Performance at 25 ºC  
Second Order Harmonic Intercept Point ....... +58 dBm (Typ.)  
Second OrderTwoTone Intercept Point ........ +52 dBm (Typ.)  
Third OrderTwoTone Intercept Point ............ +40 dBm (Typ.)  
High Gain: 20.5 dB Typical  
High Power: +24 dBm Typical  
Low Noise: 2.0 dB Typical  
Operating Temp. -55 ºC to +85 ºC  
Environmental ScreeningAvailable  
Maximum Ratings  
Ambient OperatingTemperature ................-55ºC to +100 ºC  
StorageTemperature .................................-62ºC to +125 ºC  
CaseTemperature ..................................................+125 ºC  
DCVoltage .......................................................... +18 Volts  
Continuous RF Input Power .................................. +13 dBm  
ShortTerm RF Input Power............. 50 mW (1 Minute Max.)  
Maximum Peak Power .................... 0.5 Watt (3 µsec Max.)  
Specifications  
CHARACTERISTIC  
TYPICAL  
Ta= 25 ºC  
5 - 125 MHz  
20.5  
MIN/MAX  
Ta = -55 ºC to +85 ºC  
10 - 100 MHz  
19.5 Min/21 Max.  
Frequency  
Gain (dB)  
Power @ 1 dB  
Comp. (dBm)  
Reverse  
.
+24.0  
-24  
+22.5 Min.  
-23 Max.  
Guaranteed Phase Noise Performance (dBc/Hz)  
*
Isolation (dB)  
VSWR  
In  
1.7:1  
1.35:1  
2.0  
2.0:1 Max.  
2.0:1 Max.  
3.0 Max.  
Frequency  
Typical  
Guarantee (min.)  
Out  
-158  
-172  
-174  
100 Hz  
1 kHz  
- 162  
- 175  
- 176  
- 176  
- 176  
Noise Figure (dB)  
10 kHz  
100 kHz  
1 MHz  
Power Vdc  
+15  
80  
+15  
90 Max.  
-174  
-174  
mA  
Note: Care should always be taken to effectively ground the case of each unit.  
Typical Performance Data  
Phase Noise (dBc/Hz)  
Gain (dB)  
Reverse Isolation (dB)  
22  
21  
0
-130  
-10  
- 20  
-140  
-150  
20  
19  
18  
- 30  
Stop 100 MHz - 40  
-160  
-170  
-180  
-190  
Start 10 MHz  
Start 10 MHz  
Stop 100 MHz  
1 dB Comp. (dBm)  
Noise Figure (dB)  
+26  
3
2
+25  
+24  
+23  
100  
1k  
10k  
1M  
100k  
1
+22  
2.0  
______Guarantee __ __ __Typical  
Start 10 MHz  
Start 10 MHz  
Stop 100 MHz  
Stop 100 MHz  
Input VSWR  
Output VSWR  
2.0  
1.5  
Phase Noise Test Conditions:  
Carrier Frequency: 80 mHz  
Power Output: +24 dBm  
Temperature: 25 ºC  
Agilent ES5500 System  
*
1.5  
1.0  
1.0  
Start 10 MHz  
Stop 100 MHz  
Start 10 MHz  
Stop 100 MHz  
Legend  
+25 ºC  
+85 ºC - - - - - - -55 ºC  
03/31/03  
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532  
Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001  
www.SpectrumMicrowave.com  

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