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TMS29LF040-10C5DBWL PDF预览

TMS29LF040-10C5DBWL

更新时间： 2024-11-08 20:15:15
品牌 Logo 应用领域
德州仪器 - TI 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
38页 489K
描述
512KX8 FLASH 3V PROM, 100ns, PDSO32, 8 X 14 MM, PLASTIC, TSOP-32

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TMS29LF040-10C5DBWL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP1, TSSOP32,.56,20
针数：32Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.92最长访问时间：100 ns
其他特性：100000 PROGRAM/ERASE CYCLES命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G32长度：12.4 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：8端子数量：32
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：512KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.56,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：64K最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：8 mmBase Number Matches：1

TMS29LF040-10C5DBWL 数据手册

 浏览型号TMS29LF040-10C5DBWL的Datasheet PDF文件第2页浏览型号TMS29LF040-10C5DBWL的Datasheet PDF文件第3页浏览型号TMS29LF040-10C5DBWL的Datasheet PDF文件第4页浏览型号TMS29LF040-10C5DBWL的Datasheet PDF文件第5页浏览型号TMS29LF040-10C5DBWL的Datasheet PDF文件第6页浏览型号TMS29LF040-10C5DBWL的Datasheet PDF文件第7页 
TMS29LF040, TMS29VF040  
524288 BY 8-BIT  
FLASH MEMORIES  
SMJS825D – SEPTEMBER 1995 – REVISED JUNE 1998  
FM PACKAGE  
(TOP VIEW)  
Single Power Supply  
3.3 V ± 0.3 V – TMS29LF040  
2.7 V to 3.6 V – TMS29VF040  
5 V ± 10% – See TMS29F040 Data sheet  
(Literature Number SMJS820)  
4
3 2 1 32 31 30  
Organization . . . 524288 By 8 Bits  
5
29  
28  
27  
26  
25  
24  
23  
22  
21  
A7  
A6  
A14  
A13  
A8  
6
Eight Equal Sectors of 64K Bytes  
– Any Combination of Sectors Can Be  
Erased  
– Any Combination of Sectors Can Be  
Marked as Read-Only  
7
A5  
8
A4  
A9  
9
A3  
A11  
G
10  
11  
12  
13  
A2  
A1  
A10  
E
Compatible With JEDEC Electrically  
Erasable Programmable Read-Only  
Memory (EEPROM) Command Set  
A0  
DQ0  
DQ7  
14 15 16 17 18 19 20  
Fully Automated On-Chip Erase and  
Byte-Program Operations  
100000 Program/Erase Cycles  
Erase-Suspend/Erase-Resume Operation  
Compatible With JEDEC Byte-Wide Pinouts  
PIN NOMENCLATURE  
A[0:18]  
DQ[0:7]  
E
Address Inputs  
Low-Current Consumption  
– Active Read . . . 20 mA Typical  
– Active Program/Erase . . . 30 mA Typical  
Inputs (programming)/Outputs  
Chip Enable  
G
Output Enable  
Power Supply  
Ground  
V
All Inputs/Outputs CMOS-Compatible Only  
CC  
V
SS  
W
Write Enable  
description  
The TMS29LF040 and TMS29VF040 are 524288 by 8-bit (4194304-bit), low-voltage, single-supply,  
programmable read-only memories that can be erased electrically and reprogrammed. These devices are  
organized as eight independent 64K-byte sectors and are offered with access times between 80 ns and  
150 ns.  
An on-chip state machine controls the program and erase operations. The embedded-byte program and  
sector/chip-erase functions are fully automatic. The command set is compatible with that of JEDEC 4M-bit  
EEPROMs. A suspend/resume feature allows access to unaltered memory sectors during a sector-erase  
operation. Data protection of any sector combination is accomplished using a hardware sector-protection  
feature.  
Device operations are selected by writing JEDEC-standard commands into the command register using  
standard microprocessor-write timings. The command register acts as input to an internal state machine that  
interprets the commands, controls the erase and programming operations, and outputs the status of the device,  
the data stored in the device, and the device algorithm-selection code. On initial power-up operation, the device  
defaults to the read mode.  
The TMS29xF040 is offered in a 32-pin 8 x 14 mm thin small-outline package (DBW suffix), a 32-pin  
8 x 20 mm thin small-outline package (DD suffix), and a 32-pin plastic leaded chip carrier (FM suffix) using  
1.27 mm (50-mil) lead pitch.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...38

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与TMS29LF040-10C5DBWL相关器件

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TMS29LF040-10C5DDE TI

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 		524288 BY 8-BIT FLASH MEMORIES
TMS29LF040-10C5DDE4 TI

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 		512KX8 FLASH 3V PROM, 100ns, PDSO32
TMS29LF040-10C5DDL TI

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 		524288 BY 8-BIT FLASH MEMORIES
TMS29LF040-10C5DDL4 TI

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 		512KX8 FLASH 3V PROM, 100ns, PDSO32
TMS29LF040-10C5DUE ETC

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 		x8 Flash EEPROM
TMS29LF040-10C5DUE4 TI

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 		512KX8 FLASH 3V PROM, 100ns, PDSO32
TMS29LF040-10C5DUL TI

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 		512KX8 FLASH 3V PROM, 100ns, PDSO32
TMS29LF040-10C5DUL4 TI

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 		512KX8 FLASH 3V PROM, 100ns, PDSO32
TMS29LF040-10C5FME TI

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 		512KX8 FLASH 3V PROM, 100ns, PQCC32, PLASTIC, LCC-32
TMS29LF040-10C5FME4 TI

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 		512KX8 FLASH 3V PROM, 100ns, PQCC32

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