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TMS28F020-10C4DDE4 PDF预览

TMS28F020-10C4DDE4

更新时间: 2024-11-09 20:12:59
品牌 Logo 应用领域
德州仪器 - TI 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
21页 312K
描述
256KX8 FLASH 12V PROM, 100ns, PDSO32

TMS28F020-10C4DDE4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSOP1, TSOP32,.8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.73最长访问时间:100 ns
命令用户界面:YES数据轮询:NO
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G32
长度:18.415 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSOP32,.8
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

TMS28F020-10C4DDE4 数据手册

 浏览型号TMS28F020-10C4DDE4的Datasheet PDF文件第2页浏览型号TMS28F020-10C4DDE4的Datasheet PDF文件第3页浏览型号TMS28F020-10C4DDE4的Datasheet PDF文件第4页浏览型号TMS28F020-10C4DDE4的Datasheet PDF文件第5页浏览型号TMS28F020-10C4DDE4的Datasheet PDF文件第6页浏览型号TMS28F020-10C4DDE4的Datasheet PDF文件第7页 
ꢀꢁ ꢂ ꢃꢄ ꢅꢆ ꢃꢆ  
ꢃ ꢇ ꢃ 144 BY 8ꢈ ꢉꢊ ꢀ  
ꢅ ꢋꢌ ꢂꢍ ꢁ ꢎꢁ ꢏ ꢐꢑ  
SMJS020C − OCTOBER 1994 − REVISED JANUARY 1998  
FM PACKAGE  
(TOP VIEW)  
D
D
Organization . . . 262144 by 8-Bits  
Pin Compatible With Existing 2-Megabit  
EPROMs  
D
D
D
V
Tolerance 10%  
CC  
4
3 2 1 32 31 30  
All Inputs/Outputs TTL Compatible  
5
29  
28  
27  
26  
25  
24  
23  
22  
21  
A7  
A6  
A14  
A13  
A8  
Maximum Access/Minimum Cycle Time  
6
’28F020-10  
’28F020-12  
’28F020-15  
’28F020-17  
100 ns  
120 ns  
150 ns  
170 ns  
7
A5  
8
A4  
A9  
9
A3  
A11  
G
10  
11  
12  
13  
A2  
D
D
Industry-Standard Programming Algorithm  
A1  
A10  
E
100000 and 10000 Program/Erase-Cycle  
Versions Available  
A0  
DQ0  
DQ7  
14 15 16 17 18 19 20  
D
D
Latchup Immunity of 250 mA on All Input  
and Output Lines  
Low Power Dissipation (V  
− Active Write . . . 55 mW  
= 5.5 V)  
CC  
− Active Read . . . 165 mW  
PIN NOMENCLATURE  
− Electrical Erase . . . 82.5 mW  
− Standby . . . 0.55 mW  
(CMOS-Input Levels)  
A0A17  
DQ0DQ7  
E
G
Address Inputs  
Inputs (programming)/Outputs  
Chip Enable  
D
Automotive Temperature Range  
Output Enable  
− 40°C to 125°C  
V
V
V
5-V Power Supply  
12-V Power Supply  
Ground  
CC  
PP  
SS  
description  
W
Write Enable  
The TMS28F020 flash memory is a 262144 by  
8-bit (2097152-bit), programmable read-only  
memory that can be electrically bulk-erased and  
reprogrammed. It is available in 100000 and  
10000 program/erase-endurance-cycle versions.  
The TMS28F020 is offered in a 32-lead plastic  
leaded chip-carrier package using 1,25-mm  
(50-mil) lead spacing (FM suffix) and a 32-lead  
thin small-outline package (DD suffix).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢀꢢ  
Copyright 1998, Texas Instruments Incorporated  
ꢞ ꢢ ꢟ ꢞꢗ ꢘꢬ ꢚꢙ ꢝ ꢥꢥ ꢣꢝ ꢛ ꢝ ꢜ ꢢ ꢞ ꢢ ꢛ ꢟ ꢧ  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443  

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