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TMS27C010A-20JL PDF预览

TMS27C010A-20JL

更新时间: 2024-11-26 02:58:31
品牌 Logo 应用领域
德州仪器 - TI 可编程只读存储器内存集成电路
页数 文件大小 规格书
13页 174K
描述
PROGRAMMABLE READ-ONLY MEMORIES

TMS27C010A-20JL 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:WDIP, DIP32,.6针数:32
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.27
最长访问时间:200 nsI/O 类型:COMMON
JESD-30 代码:R-GDIP-T32长度:41.91 mm
内存密度:1048576 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:CERAMIC, GLASS-SEALED封装代码:WDIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:4.91 mm
最大待机电流:0.0001 A子类别:EPROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

TMS27C010A-20JL 数据手册

 浏览型号TMS27C010A-20JL的Datasheet PDF文件第2页浏览型号TMS27C010A-20JL的Datasheet PDF文件第3页浏览型号TMS27C010A-20JL的Datasheet PDF文件第4页浏览型号TMS27C010A-20JL的Datasheet PDF文件第5页浏览型号TMS27C010A-20JL的Datasheet PDF文件第6页浏览型号TMS27C010A-20JL的Datasheet PDF文件第7页 
TMS27C010A 131072 BY 8-BIT UV ERASABLE  
TMS27PC010A 131072 BY 8-BIT  
PROGRAMMABLE READ-ONLY MEMORIES  
SMLS110C – NOVEMBER 1990 – REVISED SEPTEMBER 1997  
Organization . . . 131072 by 8 Bits  
Single 5-V Power Supply  
J PACKAGE  
(TOP VIEW)  
Operationally Compatible With Existing  
Megabit EPROMs  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
V
V
CC  
PGM  
NC  
A14  
A13  
A8  
A9  
A11  
G
PP  
2
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
3
Industry Standard 32-Pin Dual-In-line  
Package and 32-Lead Plastic Leaded Chip  
Carrier  
4
5
6
All Inputs/Outputs Fully TTL Compatible  
Maximum Access/Minimum Cycle Time  
7
8
V
± 10%  
CC  
9
’27C/PC010A-10 100 ns  
’27C/PC010A-12 120 ns  
’27C/PC010A-15 150 ns  
’27C/PC010A-20 200 ns  
10  
11  
12  
13  
14  
15  
16  
A10  
E
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
GND  
8-Bit Output For Use in  
Microprocessor-Based Systems  
Very High-Speed SNAP! Pulse  
Programming  
FM PACKAGE  
(TOP VIEW)  
Power-Saving CMOS Technology  
3-State Output Buffers  
400-mV Minimum DC Noise Immunity With  
Standard TTL Loads  
4
3 2 1 32 31 30  
Latchup Immunity of 250 mA on All Input  
and Output Pins  
5
29  
28  
27  
26  
A7  
A6  
A5  
A4  
A3  
A14  
A13  
A8  
6
7
8
9
No Pullup Resistors Required  
A9  
Low Power Dissipation (V  
= 5.5 V)  
CC  
25 A11  
– Active . . . 165 mW Worst Case  
– Standby . . . 0.55 mW Worst Case  
(CMOS-Input Levels)  
A2 10  
24  
23  
22  
21  
G
A10  
E
A1  
A0  
DQ0  
11  
12  
13  
Temperature Range Options  
DQ7  
14 15 16 17 18 19 20  
description  
The TMS27C010A series are 131072 by 8-bit  
(1048576-bit), ultraviolet (UV) light erasable,  
electrically programmable read-only memories  
(EPROMs).  
PIN NOMENCLATURE  
A0A16  
Address Inputs  
The TMS27PC010A series are 131072 by 8-bit  
(1048576-bit), one-time programmable (OTP)  
electrically programmable read-only memories  
(PROMs).  
DQ0DQ7 Inputs (programming)/Outputs  
E
Chip Enable  
G
Output Enable  
Ground  
No Internal Connection  
Program  
GND  
NC  
PGM  
V
CC  
V
PP  
5-V Power Supply  
13-V Power Supply  
Only in program mode  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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