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TM248NBK36R-70 PDF预览

TM248NBK36R-70

更新时间： 2024-09-24 15:54:39
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
11页 154K
描述
2MX36 FAST PAGE DRAM MODULE, 70ns, SMA72, SIMM-72

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中文翻译

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TM248NBK36R-70 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：SIMM包装说明：SIMM, SSIM72
针数：72Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.84访问模式：FAST PAGE
最长访问时间：70 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型：COMMONJESD-30 代码：R-XSMA-N72
内存密度：75497472 bit内存集成电路类型：FAST PAGE DRAM MODULE
内存宽度：36功能数量：1
端口数量：1端子数量：72
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：2MX36
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：SIMM封装等效代码：SSIM72
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
电源：5 V认证状态：Not Qualified
刷新周期：1024座面最大高度：25.527 mm
最大待机电流：0.018 A子类别：DRAMs
最大压摆率：1.62 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：1.27 mm端子位置：SINGLE
Base Number Matches：1

TM248NBK36R-70 数据手册

 浏览型号TM248NBK36R-70的Datasheet PDF文件第2页浏览型号TM248NBK36R-70的Datasheet PDF文件第3页浏览型号TM248NBK36R-70的Datasheet PDF文件第4页浏览型号TM248NBK36R-70的Datasheet PDF文件第5页浏览型号TM248NBK36R-70的Datasheet PDF文件第6页浏览型号TM248NBK36R-70的Datasheet PDF文件第7页 
TM124MBK36B, TM124MBK36R 1048576 BY 36-BIT  
TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT  
DYNAMIC RAM MODULE  
SMMS137E – JANUARY 1991 – REVISEDJUNE 1995  
Organization  
Presence Detect  
TM124MBK36B . . . 1 048 576 × 36  
TM248NBK36B . . . 2 097 152 × 36  
Performance Ranges:  
ACCESS ACCESS ACCESS READ  
Single 5-V Power Supply (±10% Tolerance)  
TIME  
TIME  
TIME  
OR  
t
t
t
CAC  
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
72-pin Leadless Single In-Line Memory  
Module (SIMM) for Use With Sockets  
(MAX)  
’124MBK36B-60 60 ns  
’124MBK36B-70 70 ns  
’124MBK36B-80 80 ns  
’248NBK36B-60 60 ns  
’248NBK36B-70 70 ns  
’248NBK36B-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
TM124MBK36B–Utilizes Eight 4-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages and One 4-Megabit  
Quad-CAS DRAM in a Plastic Small-Outline  
J-Lead (SOJ) Package  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
TM248NBK36B–Utilizes Sixteen 4-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages and Two 4-Megabit  
Quad-CAS DRAMs in Plastic Small-Outline  
J-Lead (SOJ) Packages  
Low Power Dissipation  
Operating Free-Air Temperature Range  
0°C to 70°C  
†
Gold-Tabbed Versions Available:  
– TM124MBK36B  
– TM248NBK36B  
Long Refresh Period  
16 ms (1024 Cycles)  
All Inputs, Outputs, Clocks Fully TTL  
Compatible  
Tin-Lead (Solder) Tabbed Versions  
Available:  
– TM124MBK36R  
3-State Output  
Common CAS Control for Nine Common  
Data-In and Data-Out Lines, in Four Blocks  
– TM248NBK36R  
Enhanced Page Mode Operation with  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
description  
TM124MBK36B  
The TM124MBK36B is a dynamic random-access memory (DRAM) organized as four times 1 048 576 × 9  
(bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The SIMM is  
composed of eight TMS44400DJ, 1 048 576 × 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead  
packages (SOJs), and one TMS44460DJ, 1 048 576 × 4-bit Quad-CAS DRAM in a 24/26-lead plastic  
small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ  
and TMS44460DJ is described in the TMS44400 or TMS44460 data sheet, respectively.  
The TM124MBK36B is available in the single-sided BK leadless module for use with sockets.  
The TM124MBK36B features RAS access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation  
from 0°C to 70°C.  
TM248NBK36B  
The TM248NBK36B is a DRAM organized as four times 2 097 152 × 9 (bit 9 is generally used for parity) in a  
72-pin leadless SIMM. The SIMM is composed of sixteen TMS44400DJ, 1 048 576 × 4-bit DRAMs, each in  
20/26-lead plastic small-outline J-lead packages (SOJs), and two TMS44460DJ, 1 048 576 × 4-bit Quad-CAS  
DRAMs, each in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with  
decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 and TMS44460  
data sheet, respectively.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...11

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