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TLV2322IDR PDF预览

TLV2322IDR

更新时间: 2024-11-29 12:02:19
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德州仪器 - TI 运算放大器
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描述
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS

TLV2322IDR 数据手册

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TLV2322, TLV2322Y, TLV2324, TLV2324Y  
LinCMOS LOW-VOLTAGE LOW-POWER  
OPERATIONAL AMPLIFIERS  
SLOS187 – FEBRUARY 1997  
TLV2322  
D OR P PACKAGE  
(TOP VIEW)  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
T = 40°C to 85°C . . . 2 V to 8 V  
A
Fully Characterized at 3 V and 5 V  
Single-Supply Operation  
1OUT  
1IN–  
1IN+  
/GND  
V
DD  
1
2
3
4
8
7
6
5
2OUT  
2IN–  
2IN+  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail and up to  
V
DD–  
V
–1 V at T = 25°C  
DD  
A
TLV2322  
PW PACKAGE  
(TOP VIEW)  
Output Voltage Range Includes Negative  
Rail  
12  
High Input Impedance . . . 10 Typical  
1
2
3
8
7
6
5
1OUT  
1IN–  
1IN+  
/GND  
V
DD+  
ESD-Protection Circuitry  
2OUT  
2IN–  
2IN+  
Designed-In Latch-Up Immunity  
4
V
DD –  
description  
TLV2324  
The TLV232x operational amplifiers are in a family  
of devices that has been specifically designed for  
use in low-voltage single-supply applications.  
This amplifier is especially well suited to  
ultra-low-power systems that require devices to  
consume the absolute minimum of supply  
currents. Each amplifier is fully functional down to  
a minimum supply voltage of 2 V, is fully  
characterized, tested, and specified at both 3-V  
and5-Vpowersupplies. Thecommon-modeinput  
voltage range includes the negative rail and  
extends to within 1 V of the positive rail.  
D OR N PACKAGE  
(TOP VIEW)  
4OUT  
1OUT  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
4IN –  
4IN +  
1IN –  
1IN +  
V
/GND  
V
DD –  
DD+  
3IN +  
3IN –  
3OUT  
2IN +  
2IN –  
2OUT  
8
TLV2324  
PW PACKAGE  
(TOP VIEW)  
These amplifiers are specifically targeted for use  
in very low-power, portable, battery-driven  
applications with the maximum supply current per  
operational amplifier specified at only 27 µA over  
its full temperature range of 40°C to 85°C.  
1
1OUT  
1IN –  
1IN +  
4OUT  
4IN –  
4IN +  
14  
V
V
/GND  
DD+  
DD –  
2IN +  
2IN –  
2OUT  
3IN +  
3IN –  
3OUT  
7
8
AVAILABLE OPTIONS  
PACKAGED DEVICES  
§
V
IO  
max AT  
25°C  
CHIP FORM  
(Y)  
T
A
PLASTIC DIP PLASTIC DIP  
SMALL OUTLINE  
(D)  
TSSOP  
(PW)  
(N)  
(P)  
TLV2322IP  
9 mV  
TLV2322ID  
TLV2324ID  
TLV2322IPWLE  
TLV2324IPWLE  
TLV2322Y  
TLV2324Y  
40°C to 85°C  
10 mV  
TLV2324IN  
§
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2322IDR).  
The PW package is only available left-end taped and reeled (e.g., TLV2322IPWLE).  
Chip forms are tested at 25°C only.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLV2322IDR 替代型号

型号 品牌 替代类型 描述 数据表
LPV358M/NOPB TI

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双路、5V、152kHz、低静态电流 (7μA)、RRO 运算放大器 | D | 8
LMC6462AIM/NOPB TI

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TL3472CD TI

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HIGH-SLEW-RATE, SINGLE-SUPPLY OPERATIONAL AMPLIFIER

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