Datasheet > TLP733F_07

TLP733F_07

更新时间： 2024-11-12 03:59:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
2页	187K
描述
Switching Power Supply

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中文翻译

获取价格

数据手册

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TLP733F_07 数据手册

TLP733F,TLP734F

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP733F,TLP734F

Office Machine

Unit in mm

Switching Power Supply

The TOSHIBA TLP733F and TLP734F consists of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a six

lead plastic DIP.

All parameters are tested to the specification of TLP733 and TLP734.

(both condition and limits)

•

Collector−emitter voltage: 55 V (min.)

Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

•

UL recognized: UL1577, file no. E67349

BSI approved: BS EN60065: 2002

Certificate no. 7364

BS EN60950-1: 2002

Certificate no. 7365

•

SEMCO approved:EN60065,EN60950-1,EN60335-1

TOSHIBA

11−7A802

Certificate no.302586

•

Isolation voltage: 4000 Vrms (min.)

Weight: 0.42 g

Option (D4) type

VDE approved: DIN EN 60747-5-2,

Certificate no. 40009373

Maximum operating insulation voltage: 890, 1130 V

Highest permissible over voltage: 6000, 8000 V

Pin Configurations (top view)

(Note) When a EN 60747-5-2 approved type is needed,

please designate the “ Option (D4) ”

•

Creepage distance: 8.0mm (min.)

Clearance: 8.0mm (min.)

Internal creepage path: 4.0mm (min.)

Insulation thickness: 0.5mm (min.)

Conforming safety standards:

DIN 57 804. VDE0804 / 1.83

DIN IEC65 / VDE0860 / 8.81

DIN IEC380 / VDE0806 / 8.81

DIN IEC435 / VDE0805 / draft nov. 84

DIN IEC601T1 / VDE0750T1 / 5.82

BS7002: 1989 (EN60950)

2007-10-01

中文翻译

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