TLP705
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705
Unit in mm
4.58±0.25
6
5 4
Plasma Display Panel.
Industrial Inverter
IGBT/Power MOS FET Gate Drive
TLP705 consists of a GaAℓAs light emitting diode and a integrated
photodetector.
1
2 3
7.62±0.25
This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs.
1.27±0.2
0.4±0.1
1.25±0.25
9.7±0.3
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Peak output current
Operating frequency
: ±0.45 A (max)
: 250kHz (max)
11-5J1
TOSHIBA 11-5J1
Weight: 0.26 g (typ.)
Guaranteed performance over temperature : −40 to 100°C
Supply current
: 3mA (max)
: 10 to 20 V
Power supply voltage
Threshold input current
: I
= 8 mA (max)
FLH
Switching time (t
/ t
)
: 200 ns (max)
pLH pHL
Common mode transient immunity
Isolation voltage
:±10 kV/μs(min)
: 5000 Vrms(min)
:UL1577, File No.E67349
UL Recognized
Construction Mechanical Rating
Pin Configuration (Top View)
7.62-mm pitch
standard type
10.16-mm pitch
TLPXXXF type
1: ANODE
1
2
3
6
5
2: NC
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
3: CATHODE
4: GND
5: V ( OUTPUT )
O
6: V
CC
•
Option (D4)
SHIELD
TÜV approved
: EN60747-5-2
Certificate No. R50033433
Maximum operating insulation voltage : 890 Vpk
Highest permissible over voltage : 8000 Vpk
Schematic
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(D4)”
I
CC
6
V
CC
(Tr1)
I
F
1+
Truth Table
I
V
O
F
5
(Tr2)
3−
V
O
Input
LED
Tr1
Tr2
Output
4
H
L
ON
ON
OFF
ON
H
L
GND
SHIELD
OFF
OFF
A 0.1 μF bypass capacitor must be connected
between pins 6 and 4. (See Note 6.)
1
2007-10-01