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TLP705F PDF预览

TLP705F

更新时间: 2024-11-18 03:59:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
2页 125K
描述
Plasma Display Panel

TLP705F 数据手册

 浏览型号TLP705F的Datasheet PDF文件第2页 
TLP705F  
TOSHIBA Photocoupler GaAAs IRED + Photo IC  
TLP705F  
Unit in mm  
Plasma Display Panel  
4.58±0.25  
Industrial Inverter  
6
5 4  
IGBT/Power MOSFET Gate Drive  
TLP705F consists of a GaAAs light emitting diode and a integrated  
photodetector.  
This unit is 6-lead SDIP package. TLP705F is 50% smaller than 8PIN DIP  
and has suited the safety standard reinforced insulation class.  
So mounting area in safety standard required equipment can be reduced.  
TLP705F is suitable for gate driving circuit of IGBT or power MOS FET.  
Especially TLP705F is capable of “direct” gate drive of lower Power IGBTs.  
Absolute Maximum ratings and electrical characteristics are the same as  
The TLP705 technical data sheets.  
1
2 3  
7.62±0.25  
1.27±0.2  
0.4±0.1  
0.75±0.25  
11.7±0.3  
Peak output current  
Operating frequency  
: ±0.45 A (max)  
: 250kHz (max)  
11-5J101  
TOSHIBA  
11-5J101  
Guaranteed performance over temperature : 40 to 100°C  
Weight0.26 g (typ.)  
Supply current  
: 3mA (max)  
: 10 to 20 V  
Power supply voltage  
Threshold input current  
: I  
= 8 mA (max)  
FLH  
Switching time (t  
/ t  
)
: 200 ns (max)  
pLH pHL  
Common mode transient immunity  
Isolation voltage  
: ±10 kV/μs(min)  
: 5000 Vrms(min)  
:UL1577, File No.E67349  
UL Recognized  
Construction Mechanical Rating  
Pin Configuration (top view)  
Creepage Distance  
Clearance  
Insulation Thickness  
8.0 mm (min)  
8.0 mm (min)  
0.4 mm (min)  
1: Anode  
1
2
3
6
5
4
2: NC  
3: Cathode  
4: GND  
Option (D4)  
TÜV approved  
5: V (output)  
O
: EN60747-5-2  
Certificate No. R50033433  
6: V  
CC  
SHIELD  
Maximum operating insulation voltage : 1140 Vpk  
Highest permissible over voltage  
: 8000 Vpk  
Truth Table  
Schematic  
I
CC  
6
V
Input  
LED  
Tr1  
Tr2  
Output  
CC  
(Tr1)  
(Tr2)  
I
F
H
L
ON  
ON  
OFF  
ON  
H
L
1+  
OFF  
OFF  
I
V
O
F
5
V
O
3−  
4
GND  
SHIELD  
A 0.1 μF bypass capacitor must be connected  
between pin 6 and 4. (See Note 6)  
1
2007-10-01  

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