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TLP351_07 PDF预览

TLP351_07

更新时间: 2024-11-09 03:59:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 223K
描述
GaAГAs IRED + Photo IC

TLP351_07 数据手册

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TLP351  
TOSHIBA Photocoupler GaAAs IRED + Photo IC  
TLP351  
Inverter for Air Conditioner  
Unit: mm  
IGBT/Power MOS FET Gate Drive  
Industrial Inverter  
The TOSHIBA TLP351 consists of a GaAAs light emitting diode and a  
integrated photodetector.  
This unit is 8-lead DIP package.  
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.  
Especially TLP351 is capable of “direct” gate drive of lower Power  
IGBTs.  
Peak output current: ±0.6 A (max)  
Guaranteed performance over temperature: 40 to 100°C  
Supply current: 2 mA (max)  
Power supply voltage: 10 to 30 V  
Threshold input current : I = 5 mA (max)  
F
Switching time (t  
/t  
) : 700 ns (max)  
pLH pHL  
Common mode transient immunity: 10 kV/μs  
Isolation voltage: 3750 Vrms  
TOSHIBA  
11-10C4  
Option(D4)  
Weight: 0.54 g (typ.)  
VDE Approved : DIN EN60747-5-2  
Maximum Operating Insulation Voltage : 890VPK  
Highest Permissible Over Voltage  
: 4000VPK  
(Note):When a EN60747-5-2 approved type is needed,  
Please designate “Option(D4)”  
Pin Configuration (top view)  
Truth Table  
1: NC  
1
2
3
4
8
7
6
5
Input  
LED  
Tr1  
Tr2  
Output  
2: Anode  
3: Cathode  
4: NC  
H
L
ON  
ON  
OFF  
ON  
H
L
OFF  
OFF  
5: GND  
6: V (output)  
O
7: NC  
8: V  
CC  
Schematic  
I
I
CC  
V
V
CC  
O
(Tr1)  
(Tr2)  
8
I
F
2+  
V
O
F
3−  
6
5
GND  
A 0.1 μF bypass capacitor must be connected  
between pin 8 and 5.  
1
2007-10-01  

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