TLP250F(INV)

更新时间： 2024-02-01 18:31:33

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体栅极晶体管双极性晶体管栅极驱动
页数	文件大小	规格书
8页	153K
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中文翻译

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数据手册

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TLP250F(INV) 数据手册

TLP250

TOSHIBA Photocoupler GaAlAs Ired & Photo−IC

TLP250

Transistor Inverter

Inverter For Air Conditionor

IGBT Gate Drive

Unit in mm

Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a

integrated photodetector.

This unit is 8 lead DIP package.

−

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

•

Input threshold current: I =5mA(max.)

Supply current (I ): 11mA(max.)

Supply voltage (V ): 10

−35V

Output current (I ): ±1.5A (max.)

Switching time (t

): 1.5µs(max.)

(min.)

pLH pHL

Isolation voltage: 2500V

rms

UL recognized: UL1577, file No.E67349

Option (D4) type

VDE approved: DIN VDE0884/06.92,certificate No.76823

Maximum operating insulation voltage: 630V

Highest permissible over voltage: 4000V

TOSHIBA

Weight: 0.54 g

11−10C4

(Note) When a VDE0884 approved type is needed,

please designate the "option (D4)"

Creepage distance: 6.4mm(min.)

•

Clearance: 6.4mm(min.)

Schmatic

Pin Configuration (top view)

(T 1)

(T 2)

GND

1 : N.C.

A 0.1µF bypass capcitor must be

connected between pin 8 and 5 (See Note 5).

2 : Anode

3 : Cathode

4 : N.C.

5 : GND

6 : V (Output)

7 : V

8 : V

Truth Table

Tr1

Tr2

Off

Input

LED

2004-06-25

12 3 4 5 6 7 8

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