Datasheet > TLP251F_07

TLP251F_07

更新时间： 2024-09-24 03:55:39

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
3页	154K
描述
GaAГAs Ired & Photo−IC

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中文翻译

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数据手册

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TLP251F_07 数据手册

TLP251F

TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP251F

Inverter for Air Conditioner

Unit in mm

Induction Heating

Transistor Inverter

Power MOSFET Gate Drive

IGBT Gate Drive

The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and

an integrated photodetector.

This unit is 8−lead DIP package.

TLP251F is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.

(~15A)

•

Input threshold current: I = 5mA (max.)

Supply current: 11mA (max.)

Supply voltage: 10~35V

TOSHIBA

11−10C402

Weight: 0.54g

Output peak current: ±0.4A (max.)

Switching time: t

, t

= 1μs (max.)

pHL pLH

Isolation voltage: 2500V

(min.)

rms

UL recognized: UL1577, file no. E67349

Option (D4) type

VDE approved: DIN EN 60747-5-2, certificate no. 40011913

Maximum operating insulation voltage: 1140V

Highest permissible over voltage: 6000V

(Note 1) When a EN 60747-5-2 approved type is needed,

please designate the “ Option (D4) ”

•

Structural parameter

Creepage distance: 8.0mm (min.)

Clearance: 8.0mm (min.)

2007-10-01

12 3

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