Datasheet > TLP250_07

TLP250_07

更新时间： 2024-11-24 03:59:27

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
7页	195K
描述
GaAГAs Ired & Photo-IC

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数据手册

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TLP250_07 数据手册

TLP250

TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP250

Transistor Inverter

Inverter For Air Conditioner

IGBT Gate Drive

Unit in mm

Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a

integrated photodetector.

This unit is 8−lead DIP package.

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

•

Input threshold current: I =5mA(max.)

Supply current (I ): 11mA(max.)

Supply voltage (V ): 10−35V

Output current (I ): ±1.5A (max.)

Switching time (t

): 0.5μs(max.)

pLH pHL

Isolation voltage: 2500V

(min.)

rms

UL recognized: UL1577, file No.E67349

Option(D4)

VDE Approved : DIN EN60747-5-2

Maximum Operating Insulation Voltage : 890V_PK

TOSHIBA

11−10C4

Weight: 0.54 g(Typ.)

Highest Permissible Over Voltage

: 4000V_PK

Pin Configuration (top view)

(Note):When a EN60747-5-2 approved type is needed,

Please designate “Option(D4)”

Truth Table

Tr1

Tr2

Off

Input

LED

1 : N.C.

5 : GND

6 : V (Output)

2 : Anode

3 : Cathode

4 : N.C.

7 : V

8 : V

Schmatic

(T 1)

(T 2)

GND

A 0.1μF bypass capcitor must be

connected between pin 8 and 5 (See Note 5).

2007-10-01

12 3 4 5 6 7

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