Datasheet > TLP176G_07

TLP176G_07

更新时间： 2024-11-11 03:59:27

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
7页	189K
描述
Photocoupler GaAs Ired & Photo−MOSFET

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中文翻译

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数据手册

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TLP176G_07 数据手册

TLP176G

TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET

TLP176G

Modems In PC

Modem−Fax Cards

Telecommunications

Unit in mm

The TOSHIBA TLP176G consists of gallium arsenide infrared emitting

diode optically coupled to a photo−MOS FET in a SOP,

which is suitable for surface mount assembly.

The TLP176G is suitable for the modem applications which require

space savings.

•

Peak off−state voltage: 350V (min)

Trigger LED current: 3mA (max)

On−state resistance: 35Ω (max)

Isolation voltage: 1500Vrms (min)

UL recognized: UL1577, file No. E67349

BSI approved

: BS EN60065: 2002, certificate No.8753

BS EN60950-1: 2002, certificate No.8754

SEMKO approved: SS EN60065

SS EN60950

JEDEC

EIAJ

―

•

Option(V4)type

TOSHIBA

TUV approved: DIN EN 60747-5-2

Certificate No.40009351

Weight: 0.1 g

Pin Configuration (top view)

Schematic

1-Form-A

1. : Anode

2. : Cathode

3. : Drain

4. : Drain

2007-10-01

12 3 4 5 6 7

中文翻译

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