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TLHF4200-AS21Z PDF预览

TLHF4200-AS21Z

更新时间: 2024-10-29 10:11:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 109K
描述
Visible LED, Clear

TLHF4200-AS21Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
颜色@波长:Amber最大正向电流:0.03 A
最大正向电压:2.6 V透镜类型:CLEAR
最高工作温度:100 °C最低工作温度:-40 °C
总高度:4.5 mm峰值波长:610 nm
最大反向电压:5 V子类别:Visible LEDs
视角:44 degBase Number Matches:1

TLHF4200-AS21Z 数据手册

 浏览型号TLHF4200-AS21Z的Datasheet PDF文件第2页浏览型号TLHF4200-AS21Z的Datasheet PDF文件第3页浏览型号TLHF4200-AS21Z的Datasheet PDF文件第4页浏览型号TLHF4200-AS21Z的Datasheet PDF文件第5页浏览型号TLHF4200-AS21Z的Datasheet PDF文件第6页 
TLHF4200  
Vishay Semiconductors  
High Intensity LED in 3 mm Tinted Non - Diffused Package  
FEATURES  
• AlInGaP technology  
• Standard 3 mm (T-1) package  
• Small mechanical tolerances  
• Suitable for DC and high peak current  
• Small viewing angle  
• Very high intensity  
19222  
• Luminous intensity color categorized  
• Lead (Pb)-free device  
DESCRIPTION  
This device has been designed to meet the increasing  
demand for AlInGaP technology.  
It is housed in a 3 mm clear plastic package. The small  
viewing angle of these devices provides a high  
brightness.  
APPLICATIONS  
• Status lights  
• OFF / ON indicator  
• Background illumination  
• Readout lights  
All packing units are categorized in luminous intensity  
and color groups. That allows users to assemble LEDs  
with uniform appearance.  
• Maintenance lights  
• Legend light  
PRODUCT GROUP AND PACKAGE DATA  
• Product group: LED  
• Package: 3 mm  
• Product series: standard  
• Angle of half intensity: 22°  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
Soft Orange, IV > 40 mcd  
TECHNOLOGY  
TLHF4200  
AllnGaP on GaAs  
1)  
ABSOLUTE MAXIMUM RATINGS TLHF4200  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
VR  
5
V
Reverse voltage  
Tamb 60 °C  
tp 10 μs  
IF  
IFSM  
PV  
30  
0.1  
80  
mA  
A
DC Forward current  
Surge forward current  
Power dissipation  
Tamb 60 °C  
mW  
°C  
°C  
°C  
°C  
Tj  
100  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 100  
- 55 to + 100  
260  
t 5 s, 2 mm from body  
Thermal resistance junction/  
ambient  
RthJA  
400  
K/W  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
Document Number 83133  
Rev. 1.5, 24-Sep-07  
www.vishay.com  
1

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